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  • CHESS2_v4

    Rights statement: This is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 924, 214-218, 2019 DOI: 10.1016/j.nima.2018.07.022

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    Available under license: CC BY-NC: Creative Commons Attribution-NonCommercial 4.0 International License

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Charge collection in irradiated HV-CMOS detectors

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  • B. Hiti
  • A. Affolder
  • K. Arndt
  • R. Bates
  • M. Benoit
  • F. Di Bello
  • A. Blue
  • D. Bortoletto
  • M. Buckland
  • C. Buttar
  • P. Caragiulo
  • D. Das
  • D. Doering
  • J. Dopke
  • A. Dragone
  • F. Ehrler
  • V. Fadeyev
  • W. Fedorko
  • Z. Galloway
  • C. Gay
  • H. Grabas
  • I.M. Gregor
  • P. Grenier
  • A. Grillo
  • Y. Han
  • M. Hoeferkamp
  • L.B.A. Hommels
  • T. Huffman
  • J. John
  • K. Kanisauskas
  • C. Kenney
  • G. Kramberger
  • Z. Liang
  • I. Mandić
  • D. Maneuski
  • F. Martinez-Mckinney
  • S. McMahon
  • L. Meng
  • M. Mikuž
  • R. Nickerson
  • I. Peric
  • P. Phillips
  • R. Plackett
  • F. Rubbo
  • L. Ruckman
  • J. Segal
  • S. Seidel
  • A. Seiden
  • I. Shipsey
  • W. Song
  • M. Stanitzki
  • D. Su
  • C. Tamma
  • R. Turchetta
  • L. Vigani
  • J. Volk
  • R. Wang
  • M. Warren
  • F. Wilson
  • S. Worm
  • Q. Xiu
  • J. Zhang
  • H. Zhu
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<mark>Journal publication date</mark>21/04/2019
<mark>Journal</mark>Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume924
Number of pages5
Pages (from-to)214-218
Publication StatusPublished
Early online date23/07/18
<mark>Original language</mark>English

Abstract

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×1015neqcm−2 and 3.6×1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from 90Sr. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.

Bibliographic note

This is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 924, 214-218, 2019 DOI: 10.1016/j.nima.2018.07.022