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Charge noise in single-electron transistors and charge qubits may be caused by metallic grains

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Charge noise in single-electron transistors and charge qubits may be caused by metallic grains. / Kafanov, Sergey; Brenning, H.; Duty, T. et al.
In: Physical review B, Vol. 78, No. 12, 125411, 17.09.2008.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kafanov, S, Brenning, H, Duty, T & Delsing, P 2008, 'Charge noise in single-electron transistors and charge qubits may be caused by metallic grains', Physical review B, vol. 78, no. 12, 125411. https://doi.org/10.1103/PhysRevB.78.125411

APA

Kafanov, S., Brenning, H., Duty, T., & Delsing, P. (2008). Charge noise in single-electron transistors and charge qubits may be caused by metallic grains. Physical review B, 78(12), Article 125411. https://doi.org/10.1103/PhysRevB.78.125411

Vancouver

Kafanov S, Brenning H, Duty T, Delsing P. Charge noise in single-electron transistors and charge qubits may be caused by metallic grains. Physical review B. 2008 Sept 17;78(12):125411. doi: 10.1103/PhysRevB.78.125411

Author

Kafanov, Sergey ; Brenning, H. ; Duty, T. et al. / Charge noise in single-electron transistors and charge qubits may be caused by metallic grains. In: Physical review B. 2008 ; Vol. 78, No. 12.

Bibtex

@article{3ca9e27799ad4f9f808f189bb8cfb4b9,
title = "Charge noise in single-electron transistors and charge qubits may be caused by metallic grains",
abstract = "We report on measurements of low-frequency noise in a single-electron transistor (SET) from a few hertz up to 10 MHz. Measurements were done for different bias and gate voltages, which allow us to separate noise contributions from different noise sources. We find a 1/f noise spectrum with two Lorentzians superimposed. The cut-off frequency of one of the Lorentzians varies systematically with the potential of the SET island. Our data is consistent with two single-charge fluctuators situated close to the tunnel barrier. We suggest that these are due to random charging of aluminum grains, each acting as a single-electron box with tunnel coupling to one of the leads and capacitively coupled to the SET island. We are able to fit the data to our model and extract parameters for the fluctuators.",
author = "Sergey Kafanov and H. Brenning and T. Duty and P. Delsing",
year = "2008",
month = sep,
day = "17",
doi = "10.1103/PhysRevB.78.125411",
language = "English",
volume = "78",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "12",

}

RIS

TY - JOUR

T1 - Charge noise in single-electron transistors and charge qubits may be caused by metallic grains

AU - Kafanov, Sergey

AU - Brenning, H.

AU - Duty, T.

AU - Delsing, P.

PY - 2008/9/17

Y1 - 2008/9/17

N2 - We report on measurements of low-frequency noise in a single-electron transistor (SET) from a few hertz up to 10 MHz. Measurements were done for different bias and gate voltages, which allow us to separate noise contributions from different noise sources. We find a 1/f noise spectrum with two Lorentzians superimposed. The cut-off frequency of one of the Lorentzians varies systematically with the potential of the SET island. Our data is consistent with two single-charge fluctuators situated close to the tunnel barrier. We suggest that these are due to random charging of aluminum grains, each acting as a single-electron box with tunnel coupling to one of the leads and capacitively coupled to the SET island. We are able to fit the data to our model and extract parameters for the fluctuators.

AB - We report on measurements of low-frequency noise in a single-electron transistor (SET) from a few hertz up to 10 MHz. Measurements were done for different bias and gate voltages, which allow us to separate noise contributions from different noise sources. We find a 1/f noise spectrum with two Lorentzians superimposed. The cut-off frequency of one of the Lorentzians varies systematically with the potential of the SET island. Our data is consistent with two single-charge fluctuators situated close to the tunnel barrier. We suggest that these are due to random charging of aluminum grains, each acting as a single-electron box with tunnel coupling to one of the leads and capacitively coupled to the SET island. We are able to fit the data to our model and extract parameters for the fluctuators.

U2 - 10.1103/PhysRevB.78.125411

DO - 10.1103/PhysRevB.78.125411

M3 - Journal article

AN - SCOPUS:52949117181

VL - 78

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 12

M1 - 125411

ER -