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Charge-collection and single-event upset measurements at the ISIS neutron source

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<mark>Journal publication date</mark>2008
<mark>Journal</mark>IEEE Transactions on Nuclear Science
Issue number4
Volume55
Number of pages7
Pages (from-to)2126 - 2132
Publication StatusPublished
<mark>Original language</mark>English

Abstract

Charge-collection measurements at the VESUVIO instrument at ISIS are described. Neutron SEU cross sections in SRAM-based FPGAs are measured. Results are compared to equivalent data from Los Alamos Neutron Science Center ICE House. The rate of single-event effects due to fast neutrons at VESUVIO is approximately 15% of that at LANSCE. In addition there is a strong thermal and epithermal component, sufficient to cause many events in devices containing small amounts of 10 B. The effects of low-energy neutrons on a commercial CCD contaminated with traces of 10 B are described. Cadmium shielding is found to be incompletely effective in separating the effects of fast and slow neutrons, and the implications for testing protocols and instrument design are discussed.