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Coherent quantum oscillations and echo measurements of a Si charge qubit

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Coherent quantum oscillations and echo measurements of a Si charge qubit. / Shi, Zhan; Simmons, C. B.; Ward, Daniel R.; Prance, Jonathan; Mohr, R. T.; Koh, Teck Seng; Gamble, John King; Wu, Xian; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

In: Physical review B, Vol. 88, No. 7, 075416, 13.08.2013.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Shi, Z, Simmons, CB, Ward, DR, Prance, J, Mohr, RT, Koh, TS, Gamble, JK, Wu, X, Savage, DE, Lagally, MG, Friesen, M, Coppersmith, SN & Eriksson, MA 2013, 'Coherent quantum oscillations and echo measurements of a Si charge qubit', Physical review B, vol. 88, no. 7, 075416. https://doi.org/10.1103/PhysRevB.88.075416

APA

Shi, Z., Simmons, C. B., Ward, D. R., Prance, J., Mohr, R. T., Koh, T. S., Gamble, J. K., Wu, X., Savage, D. E., Lagally, M. G., Friesen, M., Coppersmith, S. N., & Eriksson, M. A. (2013). Coherent quantum oscillations and echo measurements of a Si charge qubit. Physical review B, 88(7), [075416]. https://doi.org/10.1103/PhysRevB.88.075416

Vancouver

Shi Z, Simmons CB, Ward DR, Prance J, Mohr RT, Koh TS et al. Coherent quantum oscillations and echo measurements of a Si charge qubit. Physical review B. 2013 Aug 13;88(7). 075416. https://doi.org/10.1103/PhysRevB.88.075416

Author

Shi, Zhan ; Simmons, C. B. ; Ward, Daniel R. ; Prance, Jonathan ; Mohr, R. T. ; Koh, Teck Seng ; Gamble, John King ; Wu, Xian ; Savage, D. E. ; Lagally, M. G. ; Friesen, Mark ; Coppersmith, S. N. ; Eriksson, M. A. / Coherent quantum oscillations and echo measurements of a Si charge qubit. In: Physical review B. 2013 ; Vol. 88, No. 7.

Bibtex

@article{c206abec03f94cb09c7d8918a275c036,
title = "Coherent quantum oscillations and echo measurements of a Si charge qubit",
abstract = "Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127 ps to 2.1 ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise (charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127 to 760 ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.",
author = "Zhan Shi and Simmons, {C. B.} and Ward, {Daniel R.} and Jonathan Prance and Mohr, {R. T.} and Koh, {Teck Seng} and Gamble, {John King} and Xian Wu and Savage, {D. E.} and Lagally, {M. G.} and Mark Friesen and Coppersmith, {S. N.} and Eriksson, {M. A.}",
note = "{\textcopyright}2013 American Physical Society",
year = "2013",
month = aug,
day = "13",
doi = "10.1103/PhysRevB.88.075416",
language = "English",
volume = "88",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "7",

}

RIS

TY - JOUR

T1 - Coherent quantum oscillations and echo measurements of a Si charge qubit

AU - Shi, Zhan

AU - Simmons, C. B.

AU - Ward, Daniel R.

AU - Prance, Jonathan

AU - Mohr, R. T.

AU - Koh, Teck Seng

AU - Gamble, John King

AU - Wu, Xian

AU - Savage, D. E.

AU - Lagally, M. G.

AU - Friesen, Mark

AU - Coppersmith, S. N.

AU - Eriksson, M. A.

N1 - ©2013 American Physical Society

PY - 2013/8/13

Y1 - 2013/8/13

N2 - Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127 ps to 2.1 ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise (charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127 to 760 ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.

AB - Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127 ps to 2.1 ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise (charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127 to 760 ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.

U2 - 10.1103/PhysRevB.88.075416

DO - 10.1103/PhysRevB.88.075416

M3 - Journal article

VL - 88

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 7

M1 - 075416

ER -