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Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme. / Daunt, Chris L. M.; O'Callaghan, James; Lee, Ko-Hsin et al.
In: IEEE Photonics Technology Letters, Vol. 24, No. 5, 01.03.2012, p. 356-358.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Daunt, CLM, O'Callaghan, J, Lee, K-H, Yang, H, Young, RJ, Thomas, K, Pelucchi, E, Corbett, B & Peters, FH 2012, 'Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme', IEEE Photonics Technology Letters, vol. 24, no. 5, pp. 356-358. https://doi.org/10.1109/LPT.2011.2179025

APA

Daunt, C. L. M., O'Callaghan, J., Lee, K-H., Yang, H., Young, R. J., Thomas, K., Pelucchi, E., Corbett, B., & Peters, F. H. (2012). Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme. IEEE Photonics Technology Letters, 24(5), 356-358. https://doi.org/10.1109/LPT.2011.2179025

Vancouver

Daunt CLM, O'Callaghan J, Lee K-H, Yang H, Young RJ, Thomas K et al. Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme. IEEE Photonics Technology Letters. 2012 Mar 1;24(5):356-358. doi: 10.1109/LPT.2011.2179025

Author

Daunt, Chris L. M. ; O'Callaghan, James ; Lee, Ko-Hsin et al. / Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme. In: IEEE Photonics Technology Letters. 2012 ; Vol. 24, No. 5. pp. 356-358.

Bibtex

@article{887742d6c4ef4788baf3a9a340ee00d4,
title = "Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme",
abstract = "We demonstrate a shallow ridge waveguide, lumped element electroabsorption modulator (EAM) based on AlInGaAs multiple quantum wells, operating with input powers up to 8 dBm. The device was isolated between two DC controlled sections, using angled etched slots in the waveguide, minimizing optical feedback, while also providing 40-K Omega resistance between devices. The EAM uses a planar isolated pedestal contact with a benzocyclobutene bridge, allowing for a small contact footprint of just 0.024 mm(2), while being suitable for flip-chip packaging. The parasitic capacitance was measured to be 19.6 fF, and the EAM has a f(3dB) bandwidth of 42 GHz.",
author = "Daunt, {Chris L. M.} and James O'Callaghan and Ko-Hsin Lee and Hua Yang and Young, {Robert J.} and Kevin Thomas and Emanuele Pelucchi and Brian Corbett and Peters, {Frank H.}",
year = "2012",
month = mar,
day = "1",
doi = "10.1109/LPT.2011.2179025",
language = "English",
volume = "24",
pages = "356--358",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Compact Electroabsorption Modulators for Photonic Integrated Circuits, Using an Isolated Pedestal Contact Scheme

AU - Daunt, Chris L. M.

AU - O'Callaghan, James

AU - Lee, Ko-Hsin

AU - Yang, Hua

AU - Young, Robert J.

AU - Thomas, Kevin

AU - Pelucchi, Emanuele

AU - Corbett, Brian

AU - Peters, Frank H.

PY - 2012/3/1

Y1 - 2012/3/1

N2 - We demonstrate a shallow ridge waveguide, lumped element electroabsorption modulator (EAM) based on AlInGaAs multiple quantum wells, operating with input powers up to 8 dBm. The device was isolated between two DC controlled sections, using angled etched slots in the waveguide, minimizing optical feedback, while also providing 40-K Omega resistance between devices. The EAM uses a planar isolated pedestal contact with a benzocyclobutene bridge, allowing for a small contact footprint of just 0.024 mm(2), while being suitable for flip-chip packaging. The parasitic capacitance was measured to be 19.6 fF, and the EAM has a f(3dB) bandwidth of 42 GHz.

AB - We demonstrate a shallow ridge waveguide, lumped element electroabsorption modulator (EAM) based on AlInGaAs multiple quantum wells, operating with input powers up to 8 dBm. The device was isolated between two DC controlled sections, using angled etched slots in the waveguide, minimizing optical feedback, while also providing 40-K Omega resistance between devices. The EAM uses a planar isolated pedestal contact with a benzocyclobutene bridge, allowing for a small contact footprint of just 0.024 mm(2), while being suitable for flip-chip packaging. The parasitic capacitance was measured to be 19.6 fF, and the EAM has a f(3dB) bandwidth of 42 GHz.

U2 - 10.1109/LPT.2011.2179025

DO - 10.1109/LPT.2011.2179025

M3 - Journal article

VL - 24

SP - 356

EP - 358

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 5

ER -