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Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates

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Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates. / Casse, G.; Affolder, A.; Allport, P.P. et al.
In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 591, No. 1, 11.06.2008, p. 178-180.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Casse, G, Affolder, A, Allport, PP, Chilingarov, A, Greenall, A, Hara, K, Hommels, B, Kohriki, T, Ikegami, Y, Meguro, T, Terada, S & Unno, Y 2008, 'Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates', Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 591, no. 1, pp. 178-180. https://doi.org/10.1016/j.nima.2008.03.090

APA

Casse, G., Affolder, A., Allport, P. P., Chilingarov, A., Greenall, A., Hara, K., Hommels, B., Kohriki, T., Ikegami, Y., Meguro, T., Terada, S., & Unno, Y. (2008). Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 591(1), 178-180. https://doi.org/10.1016/j.nima.2008.03.090

Vancouver

Casse G, Affolder A, Allport PP, Chilingarov A, Greenall A, Hara K et al. Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2008 Jun 11;591(1):178-180. doi: 10.1016/j.nima.2008.03.090

Author

Casse, G. ; Affolder, A. ; Allport, P.P. et al. / Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates. In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 2008 ; Vol. 591, No. 1. pp. 178-180.

Bibtex

@article{9fb85952d79d4d87bfa4d3a69ea254af,
title = "Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates",
abstract = "High-resistivity p-type silicon has emerged as one of the most promising materials for the finely segmented detectors to be used in particle physics experiments where high levels of radiation damage are expected. Beside the standard high-purity float-zone (FZ) silicon, relatively high-resistivity magnetic Czocharlski (MCz) is now available from industry. This material has been proposed as possibly more radiation hard than the standard FZ. This work shows a comparison of these substrate materials in terms of charge collection efficiency measurements performed with 40 MHz analogue electronics, before and after irradiation.",
keywords = "Silicon microstrip, Radiation hardness, SLHC, Charge collection efficiency",
author = "G. Casse and A. Affolder and P.P. Allport and A. Chilingarov and A. Greenall and K. Hara and B. Hommels and T. Kohriki and Y. Ikegami and T. Meguro and S. Terada and Y. Unno",
year = "2008",
month = jun,
day = "11",
doi = "10.1016/j.nima.2008.03.090",
language = "English",
volume = "591",
pages = "178--180",
journal = "Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "ELSEVIER SCIENCE BV",
number = "1",

}

RIS

TY - JOUR

T1 - Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates

AU - Casse, G.

AU - Affolder, A.

AU - Allport, P.P.

AU - Chilingarov, A.

AU - Greenall, A.

AU - Hara, K.

AU - Hommels, B.

AU - Kohriki, T.

AU - Ikegami, Y.

AU - Meguro, T.

AU - Terada, S.

AU - Unno, Y.

PY - 2008/6/11

Y1 - 2008/6/11

N2 - High-resistivity p-type silicon has emerged as one of the most promising materials for the finely segmented detectors to be used in particle physics experiments where high levels of radiation damage are expected. Beside the standard high-purity float-zone (FZ) silicon, relatively high-resistivity magnetic Czocharlski (MCz) is now available from industry. This material has been proposed as possibly more radiation hard than the standard FZ. This work shows a comparison of these substrate materials in terms of charge collection efficiency measurements performed with 40 MHz analogue electronics, before and after irradiation.

AB - High-resistivity p-type silicon has emerged as one of the most promising materials for the finely segmented detectors to be used in particle physics experiments where high levels of radiation damage are expected. Beside the standard high-purity float-zone (FZ) silicon, relatively high-resistivity magnetic Czocharlski (MCz) is now available from industry. This material has been proposed as possibly more radiation hard than the standard FZ. This work shows a comparison of these substrate materials in terms of charge collection efficiency measurements performed with 40 MHz analogue electronics, before and after irradiation.

KW - Silicon microstrip

KW - Radiation hardness

KW - SLHC

KW - Charge collection efficiency

U2 - 10.1016/j.nima.2008.03.090

DO - 10.1016/j.nima.2008.03.090

M3 - Journal article

VL - 591

SP - 178

EP - 180

JO - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

IS - 1

ER -