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Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

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Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4. / Zhang, Zhongming; Aspinall, Michael.

In: Sensors, Vol. 21, 7930, 27.11.2021.

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@article{3445221bca084677bdd98e2bdb44680f,
title = "Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4",
abstract = "Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.",
keywords = "interaction of radiation with matter, neutron detection, semiconductor, charge collection efficiency, radiation-hard detectors, Geant4, Monte Carlo simulation",
author = "Zhongming Zhang and Michael Aspinall",
year = "2021",
month = nov,
day = "27",
doi = "10.3390/s21237930",
language = "English",
volume = "21",
journal = "Sensors",
issn = "1424-8220",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

}

RIS

TY - JOUR

T1 - Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

AU - Zhang, Zhongming

AU - Aspinall, Michael

PY - 2021/11/27

Y1 - 2021/11/27

N2 - Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.

AB - Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research.

KW - interaction of radiation with matter

KW - neutron detection

KW - semiconductor

KW - charge collection efficiency

KW - radiation-hard detectors

KW - Geant4

KW - Monte Carlo simulation

U2 - 10.3390/s21237930

DO - 10.3390/s21237930

M3 - Journal article

VL - 21

JO - Sensors

JF - Sensors

SN - 1424-8220

M1 - 7930

ER -