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Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]

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Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]. / Ghadiry, M.; Nadi, M.; Bahadoran, M. et al.
In: Microelectronics Reliability, Vol. 54, No. 3, 03.2014, p. 662-662.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Ghadiry, M, Nadi, M, Bahadoran, M, Manaf, AABD, Karimi, H & Sadeghi, H 2014, 'Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]', Microelectronics Reliability, vol. 54, no. 3, pp. 662-662. https://doi.org/10.1016/j.microrel.2014.02.010

APA

Ghadiry, M., Nadi, M., Bahadoran, M., Manaf, A. A. B. D., Karimi, H., & Sadeghi, H. (2014). Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]. Microelectronics Reliability, 54(3), 662-662. https://doi.org/10.1016/j.microrel.2014.02.010

Vancouver

Ghadiry M, Nadi M, Bahadoran M, Manaf AABD, Karimi H, Sadeghi H. Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]. Microelectronics Reliability. 2014 Mar;54(3):662-662. doi: 10.1016/j.microrel.2014.02.010

Author

Ghadiry, M. ; Nadi, M. ; Bahadoran, M. et al. / Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]. In: Microelectronics Reliability. 2014 ; Vol. 54, No. 3. pp. 662-662.

Bibtex

@article{8509009fc2434047a7641b5973985ce9,
title = "Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]",
abstract = "The authors regret that the name of the author “M. Bahadoran” is miss-spelled as M. Bahadorian and Mahdi Bahadoran has asked for spelling of his last name to be corrected in this paper. The published name “M. Bahadorian” is corrected to “M. Bahadoran”.",
author = "M. Ghadiry and M. Nadi and M. Bahadoran and Manaf, {Asrulnizam A. B. D.} and H. Karimi and Hatef Sadeghi",
year = "2014",
month = mar,
doi = "10.1016/j.microrel.2014.02.010",
language = "English",
volume = "54",
pages = "662--662",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Limited",
number = "3",

}

RIS

TY - JOUR

T1 - Corrigendum to “An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors” [Microelectron. Reliab. 53 (4) (2013) 540–543]

AU - Ghadiry, M.

AU - Nadi, M.

AU - Bahadoran, M.

AU - Manaf, Asrulnizam A. B. D.

AU - Karimi, H.

AU - Sadeghi, Hatef

PY - 2014/3

Y1 - 2014/3

N2 - The authors regret that the name of the author “M. Bahadoran” is miss-spelled as M. Bahadorian and Mahdi Bahadoran has asked for spelling of his last name to be corrected in this paper. The published name “M. Bahadorian” is corrected to “M. Bahadoran”.

AB - The authors regret that the name of the author “M. Bahadoran” is miss-spelled as M. Bahadorian and Mahdi Bahadoran has asked for spelling of his last name to be corrected in this paper. The published name “M. Bahadorian” is corrected to “M. Bahadoran”.

U2 - 10.1016/j.microrel.2014.02.010

DO - 10.1016/j.microrel.2014.02.010

M3 - Journal article

VL - 54

SP - 662

EP - 662

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 3

ER -