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Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory

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Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. / Lane, Dominic; Hodgson, Peter; Potter, Richard; Hayne, Manus.

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2021. p. 1-3.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Lane, D, Hodgson, P, Potter, R & Hayne, M 2021, Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. in 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, pp. 1-3. https://doi.org/10.1109/EDTM50988.2021.9420825

APA

Lane, D., Hodgson, P., Potter, R., & Hayne, M. (2021). Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (pp. 1-3). IEEE. https://doi.org/10.1109/EDTM50988.2021.9420825

Vancouver

Lane D, Hodgson P, Potter R, Hayne M. Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE. 2021. p. 1-3 https://doi.org/10.1109/EDTM50988.2021.9420825

Author

Lane, Dominic ; Hodgson, Peter ; Potter, Richard ; Hayne, Manus. / Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory. 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2021. pp. 1-3

Bibtex

@inproceedings{f6f4080f29e246d68aae94eecf06f95b,
title = "Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory",
abstract = "ULTRARAM{\texttrademark} is a III-V semiconductor memory technology which exploits resonant tunneling to allow ultra-low-energy memory logic switching (per unit area), whilst retaining non-volatility. Single-cell memories developed on GaAs substrates with a revised design and atomic-layer-deposition Al 2 O 3 gate dielectric demonstrate significant improvements compared to prior prototypes. Floating-gate (FG) memories with 20-μm gate length show 0/1 state contrast from 2.5-V program-read-erase-read (P/E) cycles with 500-μs pulse duration, which would scale to sub-ns switching speed at 20-nm node. Nonvolatility is confirmed by memory retention tests of 4×10 3 s with both 0 and 1 states completely invariant. Single cells demonstrate promising endurance results, undergoing 10 4 cycles without degradation. P/E cycling and disturbance tests are performed using half-voltages (±1.25 V), validating the high-density random access memory (RAM) architecture proposed previously. Finally, memory logic is retained after an equivalent of >10 5 P/E disturbances.",
author = "Dominic Lane and Peter Hodgson and Richard Potter and Manus Hayne",
year = "2021",
month = may,
day = "12",
doi = "10.1109/EDTM50988.2021.9420825",
language = "English",
isbn = "9781728181776",
pages = "1--3",
booktitle = "2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)",
publisher = "IEEE",

}

RIS

TY - GEN

T1 - Demonstration of a Fast, Low-Voltage, III-V Semiconductor, Non-Volatile Memory

AU - Lane, Dominic

AU - Hodgson, Peter

AU - Potter, Richard

AU - Hayne, Manus

PY - 2021/5/12

Y1 - 2021/5/12

N2 - ULTRARAM™ is a III-V semiconductor memory technology which exploits resonant tunneling to allow ultra-low-energy memory logic switching (per unit area), whilst retaining non-volatility. Single-cell memories developed on GaAs substrates with a revised design and atomic-layer-deposition Al 2 O 3 gate dielectric demonstrate significant improvements compared to prior prototypes. Floating-gate (FG) memories with 20-μm gate length show 0/1 state contrast from 2.5-V program-read-erase-read (P/E) cycles with 500-μs pulse duration, which would scale to sub-ns switching speed at 20-nm node. Nonvolatility is confirmed by memory retention tests of 4×10 3 s with both 0 and 1 states completely invariant. Single cells demonstrate promising endurance results, undergoing 10 4 cycles without degradation. P/E cycling and disturbance tests are performed using half-voltages (±1.25 V), validating the high-density random access memory (RAM) architecture proposed previously. Finally, memory logic is retained after an equivalent of >10 5 P/E disturbances.

AB - ULTRARAM™ is a III-V semiconductor memory technology which exploits resonant tunneling to allow ultra-low-energy memory logic switching (per unit area), whilst retaining non-volatility. Single-cell memories developed on GaAs substrates with a revised design and atomic-layer-deposition Al 2 O 3 gate dielectric demonstrate significant improvements compared to prior prototypes. Floating-gate (FG) memories with 20-μm gate length show 0/1 state contrast from 2.5-V program-read-erase-read (P/E) cycles with 500-μs pulse duration, which would scale to sub-ns switching speed at 20-nm node. Nonvolatility is confirmed by memory retention tests of 4×10 3 s with both 0 and 1 states completely invariant. Single cells demonstrate promising endurance results, undergoing 10 4 cycles without degradation. P/E cycling and disturbance tests are performed using half-voltages (±1.25 V), validating the high-density random access memory (RAM) architecture proposed previously. Finally, memory logic is retained after an equivalent of >10 5 P/E disturbances.

U2 - 10.1109/EDTM50988.2021.9420825

DO - 10.1109/EDTM50988.2021.9420825

M3 - Conference contribution/Paper

SN - 9781728181776

SP - 1

EP - 3

BT - 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

PB - IEEE

ER -