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(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. / Tekin, Serdar B.; Almalki, Saeed; Vezzoli, Andrea et al.
In: ECS Transactions, Vol. 108, No. 2, 20.05.2022, p. 69-79.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Tekin, SB, Almalki, S, Vezzoli, A, O'Brien, L, Hall, S, Chalker, PR & Mitrovic, IZ 2022, '(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas', ECS Transactions, vol. 108, no. 2, pp. 69-79. https://doi.org/10.1149/10802.0069ecst

APA

Tekin, S. B., Almalki, S., Vezzoli, A., O'Brien, L., Hall, S., Chalker, P. R., & Mitrovic, I. Z. (2022). (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. ECS Transactions, 108(2), 69-79. https://doi.org/10.1149/10802.0069ecst

Vancouver

Tekin SB, Almalki S, Vezzoli A, O'Brien L, Hall S, Chalker PR et al. (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. ECS Transactions. 2022 May 20;108(2):69-79. doi: 10.1149/10802.0069ecst

Author

Tekin, Serdar B. ; Almalki, Saeed ; Vezzoli, Andrea et al. / (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas. In: ECS Transactions. 2022 ; Vol. 108, No. 2. pp. 69-79.

Bibtex

@article{586149e9d2b044d6b176cc75637b9d92,
title = "(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas",
abstract = "Metal-Insulator-Metal (MIM) rectifiers comprising thin films of Al2O3, ZnO, NiO and Nb2O5 and metal configurations of Au/Au, Au/Zn and AuCr/AuCr, have been fabricated using atomic layer deposition and radio-frequency sputtering. The effect of device area scaling from 104 μm2 to 1 μm2 on rectification properties, in particular zero-bias dynamic resistance (R0) and zero-bias responsivity (β0) has been studied and found to be of critical importance in improving diode coupling efficiency. A significant increase of current has been found for Au/3.3 nm ZnO/Au diode when compared to the reference Au/3 nm Al2O3/Au diode, that resulted in obtaining the lowest R0 of 540 W for a device area of 104 μm2. The best performing device is found to be 1 μm2 AuCr/6.77 nm NiO/AuCr featuring (R0, b0) = (461 kW, 0.76 A/W) and a coupling efficiency of 1.5 10-5 %.",
author = "Tekin, {Serdar B.} and Saeed Almalki and Andrea Vezzoli and Liam O'Brien and Stephen Hall and Chalker, {Paul R.} and Mitrovic, {Ivona Z.}",
year = "2022",
month = may,
day = "20",
doi = "10.1149/10802.0069ecst",
language = "English",
volume = "108",
pages = "69--79",
journal = "ECS Transactions",
issn = "1938-6737",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - (Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas

AU - Tekin, Serdar B.

AU - Almalki, Saeed

AU - Vezzoli, Andrea

AU - O'Brien, Liam

AU - Hall, Stephen

AU - Chalker, Paul R.

AU - Mitrovic, Ivona Z.

PY - 2022/5/20

Y1 - 2022/5/20

N2 - Metal-Insulator-Metal (MIM) rectifiers comprising thin films of Al2O3, ZnO, NiO and Nb2O5 and metal configurations of Au/Au, Au/Zn and AuCr/AuCr, have been fabricated using atomic layer deposition and radio-frequency sputtering. The effect of device area scaling from 104 μm2 to 1 μm2 on rectification properties, in particular zero-bias dynamic resistance (R0) and zero-bias responsivity (β0) has been studied and found to be of critical importance in improving diode coupling efficiency. A significant increase of current has been found for Au/3.3 nm ZnO/Au diode when compared to the reference Au/3 nm Al2O3/Au diode, that resulted in obtaining the lowest R0 of 540 W for a device area of 104 μm2. The best performing device is found to be 1 μm2 AuCr/6.77 nm NiO/AuCr featuring (R0, b0) = (461 kW, 0.76 A/W) and a coupling efficiency of 1.5 10-5 %.

AB - Metal-Insulator-Metal (MIM) rectifiers comprising thin films of Al2O3, ZnO, NiO and Nb2O5 and metal configurations of Au/Au, Au/Zn and AuCr/AuCr, have been fabricated using atomic layer deposition and radio-frequency sputtering. The effect of device area scaling from 104 μm2 to 1 μm2 on rectification properties, in particular zero-bias dynamic resistance (R0) and zero-bias responsivity (β0) has been studied and found to be of critical importance in improving diode coupling efficiency. A significant increase of current has been found for Au/3.3 nm ZnO/Au diode when compared to the reference Au/3 nm Al2O3/Au diode, that resulted in obtaining the lowest R0 of 540 W for a device area of 104 μm2. The best performing device is found to be 1 μm2 AuCr/6.77 nm NiO/AuCr featuring (R0, b0) = (461 kW, 0.76 A/W) and a coupling efficiency of 1.5 10-5 %.

U2 - 10.1149/10802.0069ecst

DO - 10.1149/10802.0069ecst

M3 - Journal article

VL - 108

SP - 69

EP - 79

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-6737

IS - 2

ER -