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Direct observation and manipulation of hot electrons at room temperature

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Direct observation and manipulation of hot electrons at room temperature. / Wang, H.; Wang, F.; Xia, H.; Wang, P.; Li, T.; Li, J.; Wang, Z.; Sun, J.; Wu, P.; Ye, J.; Zhuang, Q.; Yang, Z.; Fu, L.; Hu, W.; Chen, X.; Lu, W.

In: National Science Review, Vol. 8, No. 9, nwaa295, 30.09.2021.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Wang, H, Wang, F, Xia, H, Wang, P, Li, T, Li, J, Wang, Z, Sun, J, Wu, P, Ye, J, Zhuang, Q, Yang, Z, Fu, L, Hu, W, Chen, X & Lu, W 2021, 'Direct observation and manipulation of hot electrons at room temperature', National Science Review, vol. 8, no. 9, nwaa295. https://doi.org/10.1093/nsr/nwaa295

APA

Wang, H., Wang, F., Xia, H., Wang, P., Li, T., Li, J., Wang, Z., Sun, J., Wu, P., Ye, J., Zhuang, Q., Yang, Z., Fu, L., Hu, W., Chen, X., & Lu, W. (2021). Direct observation and manipulation of hot electrons at room temperature. National Science Review, 8(9), [nwaa295]. https://doi.org/10.1093/nsr/nwaa295

Vancouver

Wang H, Wang F, Xia H, Wang P, Li T, Li J et al. Direct observation and manipulation of hot electrons at room temperature. National Science Review. 2021 Sep 30;8(9). nwaa295. https://doi.org/10.1093/nsr/nwaa295

Author

Wang, H. ; Wang, F. ; Xia, H. ; Wang, P. ; Li, T. ; Li, J. ; Wang, Z. ; Sun, J. ; Wu, P. ; Ye, J. ; Zhuang, Q. ; Yang, Z. ; Fu, L. ; Hu, W. ; Chen, X. ; Lu, W. / Direct observation and manipulation of hot electrons at room temperature. In: National Science Review. 2021 ; Vol. 8, No. 9.

Bibtex

@article{698af1b880fe45a69b7cee7ca35b57e0,
title = "Direct observation and manipulation of hot electrons at room temperature",
abstract = "In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like the associated thermal or power constraint of chips and the Shockley-Queisser limit for solar cell efficiency. To date, however, the manipulation of hot electrons has been mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. Such a process is accomplished through the scanning-photocurrent-microscopy measurements by activating the intervalley-scattering events and 1D charge-neutrality rule. Findings here may provide a new degree of freedom in manipulating non-equilibrium electrons for both electronic and optoelectronic applications.",
keywords = "hot electrons, valley transfer, photogating, scanning photocurrent mapping",
author = "H. Wang and F. Wang and H. Xia and P. Wang and T. Li and J. Li and Z. Wang and J. Sun and P. Wu and J. Ye and Q. Zhuang and Z. Yang and L. Fu and W. Hu and X. Chen and W. Lu",
year = "2021",
month = sep,
day = "30",
doi = "10.1093/nsr/nwaa295",
language = "English",
volume = "8",
journal = "National Science Review",
number = "9",

}

RIS

TY - JOUR

T1 - Direct observation and manipulation of hot electrons at room temperature

AU - Wang, H.

AU - Wang, F.

AU - Xia, H.

AU - Wang, P.

AU - Li, T.

AU - Li, J.

AU - Wang, Z.

AU - Sun, J.

AU - Wu, P.

AU - Ye, J.

AU - Zhuang, Q.

AU - Yang, Z.

AU - Fu, L.

AU - Hu, W.

AU - Chen, X.

AU - Lu, W.

PY - 2021/9/30

Y1 - 2021/9/30

N2 - In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like the associated thermal or power constraint of chips and the Shockley-Queisser limit for solar cell efficiency. To date, however, the manipulation of hot electrons has been mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. Such a process is accomplished through the scanning-photocurrent-microscopy measurements by activating the intervalley-scattering events and 1D charge-neutrality rule. Findings here may provide a new degree of freedom in manipulating non-equilibrium electrons for both electronic and optoelectronic applications.

AB - In modern electronics and optoelectronics, hot electron behaviors are highly concerned, as they determine the performance limit of a device or system, like the associated thermal or power constraint of chips and the Shockley-Queisser limit for solar cell efficiency. To date, however, the manipulation of hot electrons has been mostly based on conceptual interpretations rather than a direct observation. The problem arises from a fundamental fact that energy-differential electrons are mixed up in real-space, making it hard to distinguish them from each other by standard measurements. Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. Such a process is accomplished through the scanning-photocurrent-microscopy measurements by activating the intervalley-scattering events and 1D charge-neutrality rule. Findings here may provide a new degree of freedom in manipulating non-equilibrium electrons for both electronic and optoelectronic applications.

KW - hot electrons

KW - valley transfer

KW - photogating

KW - scanning photocurrent mapping

U2 - 10.1093/nsr/nwaa295

DO - 10.1093/nsr/nwaa295

M3 - Journal article

VL - 8

JO - National Science Review

JF - National Science Review

IS - 9

M1 - nwaa295

ER -