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ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas

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<mark>Journal publication date</mark>2003
<mark>Journal</mark>Diamond and Related Materials
Issue number3-7
Volume12
Number of pages5
Pages (from-to)983-987
Publication StatusPublished
<mark>Original language</mark>English
Event13th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide 2002. - Granada, Spain
Duration: 3/09/2002 → 8/09/2002

Conference

Conference13th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide 2002.
Country/TerritorySpain
CityGranada
Period3/09/02 → 8/09/02

Abstract

A series of hydrogenated amorphous carbon films have been grown from acetylene-oxygen mixtures using an Integrated Distributed Electron Cyclotron Resonance plasma reactor varying the relative precursor gases' ratio. The films were characterised by spectroscopic ellipsometry (SE), Nuclear Reaction Analysis (NRA) and visible Raman spectroscopy. It has been found that the increase of the oxygen's partial pressure (for a given acetylene pressure of 1 mT) results in a decrease of the deposition rate as well as a monotonic increase of the oxygen fraction up to 20% for a gas ratio (O-2/C2H2) = 1. Precisely, the increase of the oxygen's partial pressure is followed by a slight decrease of the optical band gap (namely the Tauc gap and the E-04 gap) and the films' density. The parameters of the Raman spectra (intensity ratio of D and G bands, the position and the FWHM of the G band) move towards values characteristic of sp(2) bonding denoting that oxygen incorporation dominates the etching of the sp(2) phase.