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ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas. / Adamopoulos, George; Godet, C. ; Drévillon, B. et al.
In: Diamond and Related Materials, Vol. 12, No. 3-7, 2003, p. 983-987.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Adamopoulos, G, Godet, C, Drévillon, B, Saito, Y, Batchelder, DN, Grosman, A & Ortega, C 2003, 'ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas', Diamond and Related Materials, vol. 12, no. 3-7, pp. 983-987. https://doi.org/10.1016/S0925-9635(02)00313-8

APA

Adamopoulos, G., Godet, C., Drévillon, B., Saito, Y., Batchelder, D. N., Grosman, A., & Ortega, C. (2003). ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas. Diamond and Related Materials, 12(3-7), 983-987. https://doi.org/10.1016/S0925-9635(02)00313-8

Vancouver

Adamopoulos G, Godet C, Drévillon B, Saito Y, Batchelder DN, Grosman A et al. ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas. Diamond and Related Materials. 2003;12(3-7):983-987. doi: 10.1016/S0925-9635(02)00313-8

Author

Adamopoulos, George ; Godet, C. ; Drévillon, B. et al. / ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas. In: Diamond and Related Materials. 2003 ; Vol. 12, No. 3-7. pp. 983-987.

Bibtex

@article{1f74d562fc10454c877762f3f2f5cec9,
title = "ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas",
abstract = "A series of hydrogenated amorphous carbon films have been grown from acetylene-oxygen mixtures using an Integrated Distributed Electron Cyclotron Resonance plasma reactor varying the relative precursor gases' ratio. The films were characterised by spectroscopic ellipsometry (SE), Nuclear Reaction Analysis (NRA) and visible Raman spectroscopy. It has been found that the increase of the oxygen's partial pressure (for a given acetylene pressure of 1 mT) results in a decrease of the deposition rate as well as a monotonic increase of the oxygen fraction up to 20% for a gas ratio (O-2/C2H2) = 1. Precisely, the increase of the oxygen's partial pressure is followed by a slight decrease of the optical band gap (namely the Tauc gap and the E-04 gap) and the films' density. The parameters of the Raman spectra (intensity ratio of D and G bands, the position and the FWHM of the G band) move towards values characteristic of sp(2) bonding denoting that oxygen incorporation dominates the etching of the sp(2) phase.",
keywords = "ECR deposition, hydrogenated amorphous carbon, Raman spectroscopy, spectroscopic ellipsometry",
author = "George Adamopoulos and C. Godet and B. Dr{\'e}villon and Y. Saito and D.N. Batchelder and A. Grosman and C. Ortega",
year = "2003",
doi = "10.1016/S0925-9635(02)00313-8",
language = "English",
volume = "12",
pages = "983--987",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "3-7",
note = "13th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide 2002. ; Conference date: 03-09-2002 Through 08-09-2002",

}

RIS

TY - JOUR

T1 - ECR deposition of hydrogenated diamond-like amorphous carbon films using acetylene-oxygen plasmas

AU - Adamopoulos, George

AU - Godet, C.

AU - Drévillon, B.

AU - Saito, Y.

AU - Batchelder, D.N.

AU - Grosman, A.

AU - Ortega, C.

PY - 2003

Y1 - 2003

N2 - A series of hydrogenated amorphous carbon films have been grown from acetylene-oxygen mixtures using an Integrated Distributed Electron Cyclotron Resonance plasma reactor varying the relative precursor gases' ratio. The films were characterised by spectroscopic ellipsometry (SE), Nuclear Reaction Analysis (NRA) and visible Raman spectroscopy. It has been found that the increase of the oxygen's partial pressure (for a given acetylene pressure of 1 mT) results in a decrease of the deposition rate as well as a monotonic increase of the oxygen fraction up to 20% for a gas ratio (O-2/C2H2) = 1. Precisely, the increase of the oxygen's partial pressure is followed by a slight decrease of the optical band gap (namely the Tauc gap and the E-04 gap) and the films' density. The parameters of the Raman spectra (intensity ratio of D and G bands, the position and the FWHM of the G band) move towards values characteristic of sp(2) bonding denoting that oxygen incorporation dominates the etching of the sp(2) phase.

AB - A series of hydrogenated amorphous carbon films have been grown from acetylene-oxygen mixtures using an Integrated Distributed Electron Cyclotron Resonance plasma reactor varying the relative precursor gases' ratio. The films were characterised by spectroscopic ellipsometry (SE), Nuclear Reaction Analysis (NRA) and visible Raman spectroscopy. It has been found that the increase of the oxygen's partial pressure (for a given acetylene pressure of 1 mT) results in a decrease of the deposition rate as well as a monotonic increase of the oxygen fraction up to 20% for a gas ratio (O-2/C2H2) = 1. Precisely, the increase of the oxygen's partial pressure is followed by a slight decrease of the optical band gap (namely the Tauc gap and the E-04 gap) and the films' density. The parameters of the Raman spectra (intensity ratio of D and G bands, the position and the FWHM of the G band) move towards values characteristic of sp(2) bonding denoting that oxygen incorporation dominates the etching of the sp(2) phase.

KW - ECR deposition

KW - hydrogenated amorphous carbon

KW - Raman spectroscopy

KW - spectroscopic ellipsometry

U2 - 10.1016/S0925-9635(02)00313-8

DO - 10.1016/S0925-9635(02)00313-8

M3 - Journal article

VL - 12

SP - 983

EP - 987

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-7

T2 - 13th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides & Silicon Carbide 2002.

Y2 - 3 September 2002 through 8 September 2002

ER -