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Edge currents shunt the insulating bulk in gapped graphene

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Edge currents shunt the insulating bulk in gapped graphene. / Zhu, M. J.; Kretinin, A. V.; Thompson, Michael Dermot et al.
In: Nature Communications, Vol. 8, 14552, 17.02.2017.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Zhu, MJ, Kretinin, AV, Thompson, MD, Bandurin, DA, Hu, S, Yu, GL, Birkbeck, J, Mishchenko, A, Vera-Marun, IJ, Watanabe, K, Taniguchi, T, Polini, M, Prance, JR, Novoselov, KS, Geim, AK & Ben Shalom, M 2017, 'Edge currents shunt the insulating bulk in gapped graphene', Nature Communications, vol. 8, 14552. https://doi.org/10.1038/ncomms14552

APA

Zhu, M. J., Kretinin, A. V., Thompson, M. D., Bandurin, D. A., Hu, S., Yu, G. L., Birkbeck, J., Mishchenko, A., Vera-Marun, I. J., Watanabe, K., Taniguchi, T., Polini, M., Prance, J. R., Novoselov, K. S., Geim, A. K., & Ben Shalom, M. (2017). Edge currents shunt the insulating bulk in gapped graphene. Nature Communications, 8, Article 14552. https://doi.org/10.1038/ncomms14552

Vancouver

Zhu MJ, Kretinin AV, Thompson MD, Bandurin DA, Hu S, Yu GL et al. Edge currents shunt the insulating bulk in gapped graphene. Nature Communications. 2017 Feb 17;8:14552. doi: 10.1038/ncomms14552

Author

Zhu, M. J. ; Kretinin, A. V. ; Thompson, Michael Dermot et al. / Edge currents shunt the insulating bulk in gapped graphene. In: Nature Communications. 2017 ; Vol. 8.

Bibtex

@article{5789fd578cb945de9de8f6f4cd7cc504,
title = "Edge currents shunt the insulating bulk in gapped graphene",
abstract = "An energy gap can be opened in the spectrum of graphene reaching values as large as 0.2 eV in the case of bilayers. However, such gaps rarely lead to the highly insulating state expected at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we revisit the issue by investigating proximity-induced superconductivity in gapped graphene and comparing normal-state measurements in the Hall bar and Corbino geometries. We find that the supercurrent at the charge neutrality point in gapped graphene propagates along narrow channels near the edges. This observation is corroborated by using the edgeless Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. In contrast, resistivity in the Hall bar geometry saturates to values of about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra.",
author = "Zhu, {M. J.} and Kretinin, {A. V.} and Thompson, {Michael Dermot} and Bandurin, {D. A.} and S. Hu and Yu, {G. L.} and J. Birkbeck and Artem Mishchenko and Vera-Marun, {I. J.} and K. Watanabe and T. Taniguchi and M. Polini and Prance, {Jonathan Robert} and Novoselov, {K. S.} and Geim, {A. K.} and {Ben Shalom}, M.",
year = "2017",
month = feb,
day = "17",
doi = "10.1038/ncomms14552",
language = "English",
volume = "8",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Edge currents shunt the insulating bulk in gapped graphene

AU - Zhu, M. J.

AU - Kretinin, A. V.

AU - Thompson, Michael Dermot

AU - Bandurin, D. A.

AU - Hu, S.

AU - Yu, G. L.

AU - Birkbeck, J.

AU - Mishchenko, Artem

AU - Vera-Marun, I. J.

AU - Watanabe, K.

AU - Taniguchi, T.

AU - Polini, M.

AU - Prance, Jonathan Robert

AU - Novoselov, K. S.

AU - Geim, A. K.

AU - Ben Shalom, M.

PY - 2017/2/17

Y1 - 2017/2/17

N2 - An energy gap can be opened in the spectrum of graphene reaching values as large as 0.2 eV in the case of bilayers. However, such gaps rarely lead to the highly insulating state expected at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we revisit the issue by investigating proximity-induced superconductivity in gapped graphene and comparing normal-state measurements in the Hall bar and Corbino geometries. We find that the supercurrent at the charge neutrality point in gapped graphene propagates along narrow channels near the edges. This observation is corroborated by using the edgeless Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. In contrast, resistivity in the Hall bar geometry saturates to values of about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra.

AB - An energy gap can be opened in the spectrum of graphene reaching values as large as 0.2 eV in the case of bilayers. However, such gaps rarely lead to the highly insulating state expected at low temperatures. This long-standing puzzle is usually explained by charge inhomogeneity. Here we revisit the issue by investigating proximity-induced superconductivity in gapped graphene and comparing normal-state measurements in the Hall bar and Corbino geometries. We find that the supercurrent at the charge neutrality point in gapped graphene propagates along narrow channels near the edges. This observation is corroborated by using the edgeless Corbino geometry in which case resistivity at the neutrality point increases exponentially with increasing the gap, as expected for an ordinary semiconductor. In contrast, resistivity in the Hall bar geometry saturates to values of about a few resistance quanta. We attribute the metallic-like edge conductance to a nontrivial topology of gapped Dirac spectra.

U2 - 10.1038/ncomms14552

DO - 10.1038/ncomms14552

M3 - Journal article

VL - 8

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 14552

ER -