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Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Unpublished

Standard

Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well. / Zhuang, Q. D.; Stanley, C.
Proceedings of the 13th international semiconducting and insulating materials conference. Beijing, China, 2004.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Zhuang, QD & Stanley, C 2004, Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well. in Proceedings of the 13th international semiconducting and insulating materials conference. Beijing, China.

APA

Zhuang, Q. D., & Stanley, C. (2004). Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well.. Unpublished In Proceedings of the 13th international semiconducting and insulating materials conference

Vancouver

Zhuang QD, Stanley C. Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well. In Proceedings of the 13th international semiconducting and insulating materials conference. Beijing, China. 2004

Author

Zhuang, Q. D. ; Stanley, C. / Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well. Proceedings of the 13th international semiconducting and insulating materials conference. Beijing, China, 2004.

Bibtex

@inproceedings{1b75563dde9348d28a08d69ef5b26054,
title = "Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well.",
author = "Zhuang, {Q. D.} and C. Stanley",
year = "2004",
language = "English",
booktitle = "Proceedings of the 13th international semiconducting and insulating materials conference",

}

RIS

TY - GEN

T1 - Effect of As supply on nitrogen incorporation of MBE grown Ga(In)Nas/GaAs quantum well.

AU - Zhuang, Q. D.

AU - Stanley, C.

PY - 2004

Y1 - 2004

M3 - Conference contribution/Paper

BT - Proceedings of the 13th international semiconducting and insulating materials conference

CY - Beijing, China

ER -