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    Rights statement: This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1361-6528/ab59f8

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Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

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Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices. / Khan, Atif ; Repiso Menendez, Eva; Herrera, M; Carrington, Peter; De La Mata, Maria; Pizarro, J; Krier, Anthony; Molina, Sergio.

In: Nanotechnology, Vol. 31, No. 10, 105702, 16.12.2019.

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@article{9489f40edb0a4059b3bdc6e12dccf828,
title = "Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices",
abstract = "Sub-monolayer (SML) deposition of InSb within InAs matrix by migration enhanced epitaxy (MEE) tends to form type II SML nanostructures offering efficient light emission within the mid-infrared (MIR) range between 3-5 µm. In this work, we report on the Sb distribution in InSb/InAs SML nanostructures with InAs cap layers grown at temperatures lower than that associated with the under-grown InSb active layer. Analysis by transmission electron microscopy (TEM) in 002 dark field (DF) conditions shows that the reduction in the growth temperature of the InAs cap layer increases the amount of Sb deposited in the layers, in good agreement with the X-ray diffraction (XRD) results. TEM micrographs also show that the layers are formed by random InSbAs agglomerates, where the lower cap temperature leads to a more continuous InSb layer. Quantitative atomic column resolved high angle annular dark field (HAADF)-scanning (S)TEM analyses also reveal atomic columns with larger composition of Sb for the structure with the lowest InAs cap layer temperature. The dependence of the Sb distribution on InAs cap growth temperature allows tuning the corresponding emission wavelength in the MIR range, as shown by the photoluminescence (PL) emission spectra. ",
author = "Atif Khan and {Repiso Menendez}, Eva and M Herrera and Peter Carrington and {De La Mata}, Maria and J Pizarro and Anthony Krier and Sergio Molina",
note = "This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1361-6528/ab59f8",
year = "2019",
month = dec,
day = "16",
language = "English",
volume = "31",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "10",

}

RIS

TY - JOUR

T1 - Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

AU - Khan, Atif

AU - Repiso Menendez, Eva

AU - Herrera, M

AU - Carrington, Peter

AU - De La Mata, Maria

AU - Pizarro, J

AU - Krier, Anthony

AU - Molina, Sergio

N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1361-6528/ab59f8

PY - 2019/12/16

Y1 - 2019/12/16

N2 - Sub-monolayer (SML) deposition of InSb within InAs matrix by migration enhanced epitaxy (MEE) tends to form type II SML nanostructures offering efficient light emission within the mid-infrared (MIR) range between 3-5 µm. In this work, we report on the Sb distribution in InSb/InAs SML nanostructures with InAs cap layers grown at temperatures lower than that associated with the under-grown InSb active layer. Analysis by transmission electron microscopy (TEM) in 002 dark field (DF) conditions shows that the reduction in the growth temperature of the InAs cap layer increases the amount of Sb deposited in the layers, in good agreement with the X-ray diffraction (XRD) results. TEM micrographs also show that the layers are formed by random InSbAs agglomerates, where the lower cap temperature leads to a more continuous InSb layer. Quantitative atomic column resolved high angle annular dark field (HAADF)-scanning (S)TEM analyses also reveal atomic columns with larger composition of Sb for the structure with the lowest InAs cap layer temperature. The dependence of the Sb distribution on InAs cap growth temperature allows tuning the corresponding emission wavelength in the MIR range, as shown by the photoluminescence (PL) emission spectra.

AB - Sub-monolayer (SML) deposition of InSb within InAs matrix by migration enhanced epitaxy (MEE) tends to form type II SML nanostructures offering efficient light emission within the mid-infrared (MIR) range between 3-5 µm. In this work, we report on the Sb distribution in InSb/InAs SML nanostructures with InAs cap layers grown at temperatures lower than that associated with the under-grown InSb active layer. Analysis by transmission electron microscopy (TEM) in 002 dark field (DF) conditions shows that the reduction in the growth temperature of the InAs cap layer increases the amount of Sb deposited in the layers, in good agreement with the X-ray diffraction (XRD) results. TEM micrographs also show that the layers are formed by random InSbAs agglomerates, where the lower cap temperature leads to a more continuous InSb layer. Quantitative atomic column resolved high angle annular dark field (HAADF)-scanning (S)TEM analyses also reveal atomic columns with larger composition of Sb for the structure with the lowest InAs cap layer temperature. The dependence of the Sb distribution on InAs cap growth temperature allows tuning the corresponding emission wavelength in the MIR range, as shown by the photoluminescence (PL) emission spectra.

M3 - Journal article

VL - 31

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 10

M1 - 105702

ER -