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Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions

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Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions. / Knap, W.; Frayssinet, E. ; Sadowski, M. L. et al.
In: Applied Physics Letters, Vol. 75, No. 20, 15.11.1999, p. 3156-3158.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Knap, W, Frayssinet, E, Sadowski, ML, Skierbiszewski, C, Maude, D, Falko, V, Khan, MA & Shur, MS 1999, 'Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions', Applied Physics Letters, vol. 75, no. 20, pp. 3156-3158. https://doi.org/10.1063/1.125262

APA

Knap, W., Frayssinet, E., Sadowski, M. L., Skierbiszewski, C., Maude, D., Falko, V., Khan, M. A., & Shur, M. S. (1999). Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions. Applied Physics Letters, 75(20), 3156-3158. https://doi.org/10.1063/1.125262

Vancouver

Knap W, Frayssinet E, Sadowski ML, Skierbiszewski C, Maude D, Falko V et al. Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions. Applied Physics Letters. 1999 Nov 15;75(20):3156-3158. doi: 10.1063/1.125262

Author

Knap, W. ; Frayssinet, E. ; Sadowski, M. L. et al. / Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions. In: Applied Physics Letters. 1999 ; Vol. 75, No. 20. pp. 3156-3158.

Bibtex

@article{c2b513e1751c4cb2b53260109268c9e4,
title = "Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions",
abstract = "The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 +/- 0.002 m(0). The Lande g factor for the 2D electrons (g = 2.06 +/- 0.04) was determined from the angular dependence of the amplitude of Shubnikov-de-Haas oscillations experiments in tilted magnetic field. (C) 1999 American Institute of Physics. [S0003-6951(99)00845-1].",
author = "W. Knap and E. Frayssinet and Sadowski, {M. L.} and C. Skierbiszewski and D. Maude and Vladimir Falko and Khan, {M. Asif} and Shur, {M. S.}",
year = "1999",
month = nov,
day = "15",
doi = "10.1063/1.125262",
language = "English",
volume = "75",
pages = "3156--3158",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "20",

}

RIS

TY - JOUR

T1 - Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions

AU - Knap, W.

AU - Frayssinet, E.

AU - Sadowski, M. L.

AU - Skierbiszewski, C.

AU - Maude, D.

AU - Falko, Vladimir

AU - Khan, M. Asif

AU - Shur, M. S.

PY - 1999/11/15

Y1 - 1999/11/15

N2 - The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 +/- 0.002 m(0). The Lande g factor for the 2D electrons (g = 2.06 +/- 0.04) was determined from the angular dependence of the amplitude of Shubnikov-de-Haas oscillations experiments in tilted magnetic field. (C) 1999 American Institute of Physics. [S0003-6951(99)00845-1].

AB - The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 +/- 0.002 m(0). The Lande g factor for the 2D electrons (g = 2.06 +/- 0.04) was determined from the angular dependence of the amplitude of Shubnikov-de-Haas oscillations experiments in tilted magnetic field. (C) 1999 American Institute of Physics. [S0003-6951(99)00845-1].

U2 - 10.1063/1.125262

DO - 10.1063/1.125262

M3 - Journal article

VL - 75

SP - 3156

EP - 3158

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -