Home > Research > Publications & Outputs > Effects of charge noise on a pulse-gated single...

Electronic data

  • 1701.06971

    Rights statement: ©2017 American Physical Society

    Accepted author manuscript, 755 KB, PDF document

    Available under license: CC BY-NC: Creative Commons Attribution-NonCommercial 4.0 International License

Links

Text available via DOI:

View graph of relations

Effects of charge noise on a pulse-gated singlet-triplet S−T− qubit

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published
  • Zhenyi Qi
  • X. Wu
  • D. R. Ward
  • Jonathan Robert Prance
  • Dohun Kim
  • John King Gamble
  • R. T. Mohr
  • Zhan Shi
  • D. E. Savage
  • M. G. Lagally
  • M. A. Eriksson
  • Mark Friesen
  • S. N. Coppersmith
  • M. G. Vavilov
Close
Article number115305
<mark>Journal publication date</mark>15/09/2017
<mark>Journal</mark>Physical review B
Issue number11
Volume96
Number of pages7
Publication StatusPublished
Early online date11/09/17
<mark>Original language</mark>English

Abstract

We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.

Bibliographic note

©2017 American Physical Society