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Efficient and high-precision image recognition in visible to near-infrared enabled by Bi2Te3/WS2 heterostructure photodetector

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Efficient and high-precision image recognition in visible to near-infrared enabled by Bi2Te3/WS2 heterostructure photodetector. / Jia, Y.; Shi, X.; Wu, Z. et al.
In: Infrared Physics and Technology, Vol. 147, 105822, 30.06.2025.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Jia, Y, Shi, X, Wu, Z, Zhuo, X, Guo, J, Zhao, T, Cao, L, Wang, F, Wang, P, He, Z, Zhuang, X, Zhuang, Q, Wang, J & Fu, Y 2025, 'Efficient and high-precision image recognition in visible to near-infrared enabled by Bi2Te3/WS2 heterostructure photodetector', Infrared Physics and Technology, vol. 147, 105822. https://doi.org/10.1016/j.infrared.2025.105822

APA

Jia, Y., Shi, X., Wu, Z., Zhuo, X., Guo, J., Zhao, T., Cao, L., Wang, F., Wang, P., He, Z., Zhuang, X., Zhuang, Q., Wang, J., & Fu, Y. (2025). Efficient and high-precision image recognition in visible to near-infrared enabled by Bi2Te3/WS2 heterostructure photodetector. Infrared Physics and Technology, 147, Article 105822. Advance online publication. https://doi.org/10.1016/j.infrared.2025.105822

Vancouver

Jia Y, Shi X, Wu Z, Zhuo X, Guo J, Zhao T et al. Efficient and high-precision image recognition in visible to near-infrared enabled by Bi2Te3/WS2 heterostructure photodetector. Infrared Physics and Technology. 2025 Jun 30;147:105822. Epub 2025 Mar 30. doi: 10.1016/j.infrared.2025.105822

Author

Jia, Y. ; Shi, X. ; Wu, Z. et al. / Efficient and high-precision image recognition in visible to near-infrared enabled by Bi2Te3/WS2 heterostructure photodetector. In: Infrared Physics and Technology. 2025 ; Vol. 147.

Bibtex

@article{2fd4089809014674862c450f08f874a6,
title = "Efficient and high-precision image recognition in visible to near-infrared enabled by Bi2Te3/WS2 heterostructure photodetector",
abstract = "Owing to its exceptional carrier mobility and unique topological features, Bi2Te3 emerges as an ideal material for crafting high-performance photodetectors. The synergistic integration of Bi2Te3 photodetectors with convolutional neural networks (CNNs) holds the potential to enhance feature extraction robustness and target recognition accuracy. This study focuses on the optoelectronic properties of the Bi2Te3/WS2 heterojunction and explores its application in Image recognition in combination with CNNs. By fabricating the Bi2Te3/WS2 photodetector, the dark current of the device has been effectively reduced, enabling photodetection within the visible-near-infrared wavelength range. The device has a detectivity of 8.39 × 108 cm·Hz1/2·W−1 and a response time of 185 μs/71 μs. Furthermore, the Bi2Te3/WS2 photodetector enables high-resolution image imaging. Leveraging CNNs, the image recognition accuracy attains 88 %. This research not only illuminates the construction of Bi2Te3 nanostructured optoelectronic heterojunction devices but also presents an innovative approach for image recognition applications.",
author = "Y. Jia and X. Shi and Z. Wu and X. Zhuo and J. Guo and T. Zhao and L. Cao and F. Wang and P. Wang and Z. He and X. Zhuang and Q. Zhuang and J. Wang and Y. Fu",
year = "2025",
month = mar,
day = "30",
doi = "10.1016/j.infrared.2025.105822",
language = "English",
volume = "147",
journal = "Infrared Physics and Technology",
issn = "1350-4495",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Efficient and high-precision image recognition in visible to near-infrared enabled by Bi2Te3/WS2 heterostructure photodetector

AU - Jia, Y.

AU - Shi, X.

AU - Wu, Z.

AU - Zhuo, X.

AU - Guo, J.

AU - Zhao, T.

AU - Cao, L.

AU - Wang, F.

AU - Wang, P.

AU - He, Z.

AU - Zhuang, X.

AU - Zhuang, Q.

AU - Wang, J.

AU - Fu, Y.

PY - 2025/3/30

Y1 - 2025/3/30

N2 - Owing to its exceptional carrier mobility and unique topological features, Bi2Te3 emerges as an ideal material for crafting high-performance photodetectors. The synergistic integration of Bi2Te3 photodetectors with convolutional neural networks (CNNs) holds the potential to enhance feature extraction robustness and target recognition accuracy. This study focuses on the optoelectronic properties of the Bi2Te3/WS2 heterojunction and explores its application in Image recognition in combination with CNNs. By fabricating the Bi2Te3/WS2 photodetector, the dark current of the device has been effectively reduced, enabling photodetection within the visible-near-infrared wavelength range. The device has a detectivity of 8.39 × 108 cm·Hz1/2·W−1 and a response time of 185 μs/71 μs. Furthermore, the Bi2Te3/WS2 photodetector enables high-resolution image imaging. Leveraging CNNs, the image recognition accuracy attains 88 %. This research not only illuminates the construction of Bi2Te3 nanostructured optoelectronic heterojunction devices but also presents an innovative approach for image recognition applications.

AB - Owing to its exceptional carrier mobility and unique topological features, Bi2Te3 emerges as an ideal material for crafting high-performance photodetectors. The synergistic integration of Bi2Te3 photodetectors with convolutional neural networks (CNNs) holds the potential to enhance feature extraction robustness and target recognition accuracy. This study focuses on the optoelectronic properties of the Bi2Te3/WS2 heterojunction and explores its application in Image recognition in combination with CNNs. By fabricating the Bi2Te3/WS2 photodetector, the dark current of the device has been effectively reduced, enabling photodetection within the visible-near-infrared wavelength range. The device has a detectivity of 8.39 × 108 cm·Hz1/2·W−1 and a response time of 185 μs/71 μs. Furthermore, the Bi2Te3/WS2 photodetector enables high-resolution image imaging. Leveraging CNNs, the image recognition accuracy attains 88 %. This research not only illuminates the construction of Bi2Te3 nanostructured optoelectronic heterojunction devices but also presents an innovative approach for image recognition applications.

U2 - 10.1016/j.infrared.2025.105822

DO - 10.1016/j.infrared.2025.105822

M3 - Journal article

VL - 147

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

M1 - 105822

ER -