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Electrical characterization of HfO<sub>2</sub> based resistive RAM devices having different bottom electrode metallizations

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Electrical characterization of HfO<sub>2</sub> based resistive RAM devices having different bottom electrode metallizations. / Tekin, Serdar B.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). 2018.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Tekin, SB 2018, Electrical characterization of HfO<sub>2</sub> based resistive RAM devices having different bottom electrode metallizations. in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). https://doi.org/10.1109/ulis.2018.8354734

APA

Tekin, S. B. (2018). Electrical characterization of HfO<sub>2</sub> based resistive RAM devices having different bottom electrode metallizations. In 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) https://doi.org/10.1109/ulis.2018.8354734

Vancouver

Tekin SB. Electrical characterization of HfO<sub>2</sub> based resistive RAM devices having different bottom electrode metallizations. In 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). 2018 doi: 10.1109/ulis.2018.8354734

Author

Tekin, Serdar B. / Electrical characterization of HfO<sub>2</sub> based resistive RAM devices having different bottom electrode metallizations. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). 2018.

Bibtex

@inproceedings{c4d9e748329f431c81892e8555bacf23,
title = "Electrical characterization of HfO2 based resistive RAM devices having different bottom electrode metallizations",
abstract = "HfO 2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, having four different bottom electrode materials fabricated by CEA-LETI and ASM cooperation. The effects of bottom electrode metallization on Forming, switching and capacitive characteristics were studied and most efficient combinations were determined among these structures. It was observed that devices having atomic layer deposited (ALD) bottom electrode have some capacitive properties. Also TiN and TiWN bottom electrodes indicate promising switching characteristics and low operation voltages among others.",
author = "Tekin, {Serdar B.}",
year = "2018",
month = may,
day = "7",
doi = "10.1109/ulis.2018.8354734",
language = "English",
booktitle = "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)",

}

RIS

TY - GEN

T1 - Electrical characterization of HfO2 based resistive RAM devices having different bottom electrode metallizations

AU - Tekin, Serdar B.

PY - 2018/5/7

Y1 - 2018/5/7

N2 - HfO 2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, having four different bottom electrode materials fabricated by CEA-LETI and ASM cooperation. The effects of bottom electrode metallization on Forming, switching and capacitive characteristics were studied and most efficient combinations were determined among these structures. It was observed that devices having atomic layer deposited (ALD) bottom electrode have some capacitive properties. Also TiN and TiWN bottom electrodes indicate promising switching characteristics and low operation voltages among others.

AB - HfO 2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, having four different bottom electrode materials fabricated by CEA-LETI and ASM cooperation. The effects of bottom electrode metallization on Forming, switching and capacitive characteristics were studied and most efficient combinations were determined among these structures. It was observed that devices having atomic layer deposited (ALD) bottom electrode have some capacitive properties. Also TiN and TiWN bottom electrodes indicate promising switching characteristics and low operation voltages among others.

U2 - 10.1109/ulis.2018.8354734

DO - 10.1109/ulis.2018.8354734

M3 - Conference contribution/Paper

BT - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

ER -