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Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se)

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Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se). / Oda, Anhar A.; Al-Jobory, Alaa A.; Nawaf, Sameer et al.
In: Materials Science in Semiconductor Processing, Vol. 199, 109822, 15.11.2025.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Oda, AA, Al-Jobory, AA, Nawaf, S, Lattoofi, NF, Motlak, M & Ismael, A 2025, 'Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se)', Materials Science in Semiconductor Processing, vol. 199, 109822. https://doi.org/10.1016/j.mssp.2025.109822

APA

Oda, A. A., Al-Jobory, A. A., Nawaf, S., Lattoofi, N. F., Motlak, M., & Ismael, A. (2025). Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se). Materials Science in Semiconductor Processing, 199, Article 109822. Advance online publication. https://doi.org/10.1016/j.mssp.2025.109822

Vancouver

Oda AA, Al-Jobory AA, Nawaf S, Lattoofi NF, Motlak M, Ismael A. Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se). Materials Science in Semiconductor Processing. 2025 Nov 15;199:109822. Epub 2025 Jul 4. doi: 10.1016/j.mssp.2025.109822

Author

Oda, Anhar A. ; Al-Jobory, Alaa A. ; Nawaf, Sameer et al. / Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se). In: Materials Science in Semiconductor Processing. 2025 ; Vol. 199.

Bibtex

@article{cc3416c36be647408a18ea71e49772b2,
title = "Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se)",
abstract = "Consideration how electrons move through molecular junctions will enable researchers to create superior thermoelectric energy conversion materials. This research applies density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) formalism to study the electronic and thermoelectric behavior of metalloid-endohedral fullerenes (M@C80, M = P, S, As, Se) connected to gold and graphene electrodes. The transmission coefficient T(E) undergoes significant changes when metalloids are introduced into C80, which creates unique electronic transport characteristics. Metalloid-doped systems achieve notable improvements in thermoelectric response and performance metrics like the Seebeck coefficient (S) and figure of merit (ZT), especially when integrated with graphene electrodes. Se@C80 surpasses all other dopants in terms of thermal conductance and thermoelectric performance across both tested electrode types. Doping with metals is critical since it is important to change electronic transport properties and improve thermoelectric efficiency, which provides useful information for developing new molecular electronics and nanoscale energy conversion devices.",
keywords = "C molecular junctions, Fullerene, Thermal conductivity, Thermoelectric characteristics, Transmission coefficient",
author = "Oda, {Anhar A.} and Al-Jobory, {Alaa A.} and Sameer Nawaf and Lattoofi, {Nabeel F.} and Moaaed Motlak and Ali Ismael",
year = "2025",
month = jul,
day = "4",
doi = "10.1016/j.mssp.2025.109822",
language = "English",
volume = "199",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Electrode variability and its impact on the characteristics of M@C80 molecular junctions (M = P, S, As, Se)

AU - Oda, Anhar A.

AU - Al-Jobory, Alaa A.

AU - Nawaf, Sameer

AU - Lattoofi, Nabeel F.

AU - Motlak, Moaaed

AU - Ismael, Ali

PY - 2025/7/4

Y1 - 2025/7/4

N2 - Consideration how electrons move through molecular junctions will enable researchers to create superior thermoelectric energy conversion materials. This research applies density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) formalism to study the electronic and thermoelectric behavior of metalloid-endohedral fullerenes (M@C80, M = P, S, As, Se) connected to gold and graphene electrodes. The transmission coefficient T(E) undergoes significant changes when metalloids are introduced into C80, which creates unique electronic transport characteristics. Metalloid-doped systems achieve notable improvements in thermoelectric response and performance metrics like the Seebeck coefficient (S) and figure of merit (ZT), especially when integrated with graphene electrodes. Se@C80 surpasses all other dopants in terms of thermal conductance and thermoelectric performance across both tested electrode types. Doping with metals is critical since it is important to change electronic transport properties and improve thermoelectric efficiency, which provides useful information for developing new molecular electronics and nanoscale energy conversion devices.

AB - Consideration how electrons move through molecular junctions will enable researchers to create superior thermoelectric energy conversion materials. This research applies density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) formalism to study the electronic and thermoelectric behavior of metalloid-endohedral fullerenes (M@C80, M = P, S, As, Se) connected to gold and graphene electrodes. The transmission coefficient T(E) undergoes significant changes when metalloids are introduced into C80, which creates unique electronic transport characteristics. Metalloid-doped systems achieve notable improvements in thermoelectric response and performance metrics like the Seebeck coefficient (S) and figure of merit (ZT), especially when integrated with graphene electrodes. Se@C80 surpasses all other dopants in terms of thermal conductance and thermoelectric performance across both tested electrode types. Doping with metals is critical since it is important to change electronic transport properties and improve thermoelectric efficiency, which provides useful information for developing new molecular electronics and nanoscale energy conversion devices.

KW - C molecular junctions

KW - Fullerene

KW - Thermal conductivity

KW - Thermoelectric characteristics

KW - Transmission coefficient

U2 - 10.1016/j.mssp.2025.109822

DO - 10.1016/j.mssp.2025.109822

M3 - Journal article

AN - SCOPUS:105009722227

VL - 199

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

M1 - 109822

ER -