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    Rights statement: This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/1361-6528/aa9356

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Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition. / Durrani, Zahid A. K.; Jones, Mervyn E.; Wang, Chen et al.
In: Nanotechnology, Vol. 28, No. 47, 474002, 24.11.2017.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Durrani, ZAK, Jones, ME, Wang, C, Scotuzzi, M & Hagen, CW 2017, 'Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition', Nanotechnology, vol. 28, no. 47, 474002. https://doi.org/10.1088/1361-6528/aa9356

APA

Durrani, Z. A. K., Jones, M. E., Wang, C., Scotuzzi, M., & Hagen, C. W. (2017). Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition. Nanotechnology, 28(47), Article 474002. https://doi.org/10.1088/1361-6528/aa9356

Vancouver

Durrani ZAK, Jones ME, Wang C, Scotuzzi M, Hagen CW. Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition. Nanotechnology. 2017 Nov 24;28(47):474002. Epub 2017 Nov 3. doi: 10.1088/1361-6528/aa9356

Author

Durrani, Zahid A. K. ; Jones, Mervyn E. ; Wang, Chen et al. / Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition. In: Nanotechnology. 2017 ; Vol. 28, No. 47.

Bibtex

@article{2086a8ae84614ae18c14004d1cd61618,
title = "Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition",
abstract = "Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ~20 nm, integrated within ~100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ~20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Room-temperature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.",
keywords = "electron beam induced deposition, single electron transport, single electron transistor",
author = "Durrani, {Zahid A. K.} and Jones, {Mervyn E.} and Chen Wang and M. Scotuzzi and Hagen, {C. W.}",
note = "This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/1361-6528/aa9356",
year = "2017",
month = nov,
day = "24",
doi = "10.1088/1361-6528/aa9356",
language = "English",
volume = "28",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "47",

}

RIS

TY - JOUR

T1 - Electron transport and room temperature single-electron charging in 10 nm scale PtC nanostructures formed by electron beam induced deposition

AU - Durrani, Zahid A. K.

AU - Jones, Mervyn E.

AU - Wang, Chen

AU - Scotuzzi, M.

AU - Hagen, C. W.

N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/1361-6528/aa9356

PY - 2017/11/24

Y1 - 2017/11/24

N2 - Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ~20 nm, integrated within ~100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ~20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Room-temperature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.

AB - Nanostructures of platinum-carbon nanocomposite material have been formed by electron-beam induced deposition. These consist of nanodots and nanowires with a minimum size ~20 nm, integrated within ~100 nm nanogap n-type silicon-on-insulator transistor structures. The nanodot transistors use ~20 nm Pt/C nanodots, tunnel-coupled to Pt/C nanowire electrodes, bridging the Si nanogaps. Room-temperature single-electron transistor operation has been measured, and single-electron current oscillations and 'Coulomb diamonds' observed. In nanowire transistors, the temperature dependence from 290 to 8 K suggests that the current is a combination of thermally activated and tunnelling transport of carriers across potential barriers along the current path, and that the Pt/C is p-type at low temperature.

KW - electron beam induced deposition

KW - single electron transport

KW - single electron transistor

U2 - 10.1088/1361-6528/aa9356

DO - 10.1088/1361-6528/aa9356

M3 - Journal article

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 47

M1 - 474002

ER -