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Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

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  • George Adamopoulos
  • Aneeqa Bashir
  • Paul H. Wöbkenberg
  • Donal D. C. Bradley
  • Thomas D. Anthopoulos
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Article number133507
<mark>Journal publication date</mark>28/09/2009
<mark>Journal</mark>Applied Physics Letters
Issue number13
Volume95
Number of pages3
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n-channel characteristics with electron mobility in the range 10-22 cm(2)/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.