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Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

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Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air. / Adamopoulos, George; Bashir, Aneeqa ; Wöbkenberg, Paul H. et al.
In: Applied Physics Letters, Vol. 95, No. 13, 133507, 28.09.2009.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Adamopoulos, G, Bashir, A, Wöbkenberg, PH, Bradley, DDC & Anthopoulos, TD 2009, 'Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air', Applied Physics Letters, vol. 95, no. 13, 133507. https://doi.org/10.1063/1.3238466

APA

Adamopoulos, G., Bashir, A., Wöbkenberg, P. H., Bradley, D. D. C., & Anthopoulos, T. D. (2009). Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air. Applied Physics Letters, 95(13), Article 133507. https://doi.org/10.1063/1.3238466

Vancouver

Adamopoulos G, Bashir A, Wöbkenberg PH, Bradley DDC, Anthopoulos TD. Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air. Applied Physics Letters. 2009 Sept 28;95(13):133507. doi: 10.1063/1.3238466

Author

Adamopoulos, George ; Bashir, Aneeqa ; Wöbkenberg, Paul H. et al. / Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air. In: Applied Physics Letters. 2009 ; Vol. 95, No. 13.

Bibtex

@article{ca00851ac8a347cc9103644bb73508bf,
title = "Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air",
abstract = "We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n-channel characteristics with electron mobility in the range 10-22 cm(2)/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed. ",
keywords = "HIN-FILM-TRANSISTOR , OXIDE SEMICONDUCTOR",
author = "George Adamopoulos and Aneeqa Bashir and W{\"o}bkenberg, {Paul H.} and Bradley, {Donal D. C.} and Anthopoulos, {Thomas D.}",
year = "2009",
month = sep,
day = "28",
doi = "10.1063/1.3238466",
language = "English",
volume = "95",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "13",

}

RIS

TY - JOUR

T1 - Electronic properties of ZnO field-effect transistors fabricated by spray pyrolysis in ambient air

AU - Adamopoulos, George

AU - Bashir, Aneeqa

AU - Wöbkenberg, Paul H.

AU - Bradley, Donal D. C.

AU - Anthopoulos, Thomas D.

PY - 2009/9/28

Y1 - 2009/9/28

N2 - We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n-channel characteristics with electron mobility in the range 10-22 cm(2)/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.

AB - We report the application of spray pyrolysis (SP) for the deposition of high quality zinc oxide (ZnO) films and the fabrication of thin-film transistors. The chemical, structural, optical, and electronic properties of as-deposited ZnO films are studied using infrared spectroscopy, atomic force microscopy, UV-visible spectroscopic ellipsometry, and field-effect measurements. SP ZnO films are found to be uniform and polycrystalline with a band gap of 3.32 eV. ZnO transistors exhibit n-channel characteristics with electron mobility in the range 10-22 cm(2)/Vs. Device performance is found to depend on the work function of source/drain metal electrodes and on the device architecture employed.

KW - HIN-FILM-TRANSISTOR

KW - OXIDE SEMICONDUCTOR

U2 - 10.1063/1.3238466

DO - 10.1063/1.3238466

M3 - Journal article

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 133507

ER -