Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications

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Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications. / Yeap, Gik Hong; Rybchenko, Sergey; Itskevich, Igor et al.
In: Defect and Diffusion Forum, Vol. 425, 31.05.2023, p. 3-8.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Yeap, GH, Rybchenko, S, Itskevich, I, Haywood, S, Carrington, P & Krier, A 2023, 'Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications', Defect and Diffusion Forum, vol. 425, pp. 3-8. https://doi.org/10.4028/p-72o15p

APA

Yeap, G. H., Rybchenko, S., Itskevich, I., Haywood, S., Carrington, P., & Krier, A. (2023). Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications. Defect and Diffusion Forum, 425, 3-8. Advance online publication. https://doi.org/10.4028/p-72o15p

Vancouver

Yeap GH, Rybchenko S, Itskevich I, Haywood S, Carrington P , Krier A. Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications. Defect and Diffusion Forum. 2023 May 31;425:3-8. Epub 2023 May 31. doi: 10.4028/p-72o15p

Author

Yeap, Gik Hong ; Rybchenko, Sergey ; Itskevich, Igor et al. / Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications. In: Defect and Diffusion Forum. 2023 ; Vol. 425. pp. 3-8.

Bibtex

@article{4c7c17cd39a04c5593f5a75252efbf8a,

title = "Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications",

abstract = "InSb-based self-assembled quantum dots (SAQDs) are very promising for the mid-infrared (3-5 μm) optical range. We have analysed the electronic structure and optical properties of InAsxSb1-x/InAs dots. In this paper, we present the results of the modelling of electronic structure and optical properties from photoluminescence (PL) measurement for InAsxSb1-x/InAs SAQDs, focusing on the effects of SAQD morphology and composition. In particular, we analyse the electronic structure of InAsxSb1-x/InAs SAQD of various shapes, aspect ratios and compositions. We also suggest a method of assessing the geometry and composition of InAsxSb1-x/InAs quantum dots using their optical spectra and limited microscopy information. The calculated transition energies agree well with the experimental results. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.",

keywords = "Condensed Matter Physics, General Materials Science, Radiation",

author = "Yeap, {Gik Hong} and Sergey Rybchenko and Igor Itskevich and Stephanie Haywood and Peter Carrington and Anthony Krier",

year = "2023",

month = may,

day = "31",

doi = "10.4028/p-72o15p",

language = "English",

volume = "425",

pages = "3--8",

journal = "Defect and Diffusion Forum",

issn = "1662-9507",

publisher = "TRANS TECH PUBLICATIONS LTD, BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND",

}

RIS

TY - JOUR

T1 - Electronic Structure and Optical Properties of Strained Type-II InAsxSb1-x/InAs Quantum Dots for Mid-Infrared Applications

AU - Yeap, Gik Hong

AU - Rybchenko, Sergey

AU - Itskevich, Igor

AU - Haywood, Stephanie

AU - Carrington, Peter

AU - Krier, Anthony

PY - 2023/5/31

Y1 - 2023/5/31

N2 - InSb-based self-assembled quantum dots (SAQDs) are very promising for the mid-infrared (3-5 μm) optical range. We have analysed the electronic structure and optical properties of InAsxSb1-x/InAs dots. In this paper, we present the results of the modelling of electronic structure and optical properties from photoluminescence (PL) measurement for InAsxSb1-x/InAs SAQDs, focusing on the effects of SAQD morphology and composition. In particular, we analyse the electronic structure of InAsxSb1-x/InAs SAQD of various shapes, aspect ratios and compositions. We also suggest a method of assessing the geometry and composition of InAsxSb1-x/InAs quantum dots using their optical spectra and limited microscopy information. The calculated transition energies agree well with the experimental results. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.

AB - InSb-based self-assembled quantum dots (SAQDs) are very promising for the mid-infrared (3-5 μm) optical range. We have analysed the electronic structure and optical properties of InAsxSb1-x/InAs dots. In this paper, we present the results of the modelling of electronic structure and optical properties from photoluminescence (PL) measurement for InAsxSb1-x/InAs SAQDs, focusing on the effects of SAQD morphology and composition. In particular, we analyse the electronic structure of InAsxSb1-x/InAs SAQD of various shapes, aspect ratios and compositions. We also suggest a method of assessing the geometry and composition of InAsxSb1-x/InAs quantum dots using their optical spectra and limited microscopy information. The calculated transition energies agree well with the experimental results. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.

KW - Condensed Matter Physics

KW - General Materials Science

KW - Radiation

U2 - 10.4028/p-72o15p

DO - 10.4028/p-72o15p

M3 - Journal article

VL - 425

SP - 3

EP - 8

JO - Defect and Diffusion Forum

JF - Defect and Diffusion Forum

SN - 1662-9507

ER -

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