Rights statement: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics, 116 (4), 2014 and may be found at http://dx.doi.org/10.1063/1.4891223
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Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Article number | 044304 |
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<mark>Journal publication date</mark> | 28/07/2014 |
<mark>Journal</mark> | Journal of Applied Physics |
Issue number | 4 |
Volume | 116 |
Number of pages | 6 |
Publication Status | Published |
Early online date | 23/07/14 |
<mark>Original language</mark> | English |
The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudomonochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo-and thermal-emission characteristics of the quantum rings. (C) 2014 AIP Publishing LLC.