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Evidence for spin memory in the electron phase coherence in graphene

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Evidence for spin memory in the electron phase coherence in graphene. / Kozikov, A A; Horsell, D W; McCann, Edward et al.
In: Physical review B, Vol. 86, No. 4, 045436, 23.07.2012.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Kozikov, AA, Horsell, DW, McCann, E & Falko, V 2012, 'Evidence for spin memory in the electron phase coherence in graphene', Physical review B, vol. 86, no. 4, 045436. https://doi.org/10.1103/PhysRevB.86.045436

APA

Kozikov, A. A., Horsell, D. W., McCann, E., & Falko, V. (2012). Evidence for spin memory in the electron phase coherence in graphene. Physical review B, 86(4), Article 045436. https://doi.org/10.1103/PhysRevB.86.045436

Vancouver

Kozikov AA, Horsell DW, McCann E, Falko V. Evidence for spin memory in the electron phase coherence in graphene. Physical review B. 2012 Jul 23;86(4):045436. doi: 10.1103/PhysRevB.86.045436

Author

Kozikov, A A ; Horsell, D W ; McCann, Edward et al. / Evidence for spin memory in the electron phase coherence in graphene. In: Physical review B. 2012 ; Vol. 86, No. 4.

Bibtex

@article{cb0a0187c56843c7a94a4fa08800f484,
title = "Evidence for spin memory in the electron phase coherence in graphene",
abstract = "We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature, and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magneticlike defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.",
keywords = "graphene",
author = "Kozikov, {A A} and Horsell, {D W} and Edward McCann and Vladimir Falko",
note = "{\textcopyright}2012 American Physical Society",
year = "2012",
month = jul,
day = "23",
doi = "10.1103/PhysRevB.86.045436",
language = "English",
volume = "86",
journal = "Physical review B",
issn = "1550-235X",
publisher = "AMER PHYSICAL SOC",
number = "4",

}

RIS

TY - JOUR

T1 - Evidence for spin memory in the electron phase coherence in graphene

AU - Kozikov, A A

AU - Horsell, D W

AU - McCann, Edward

AU - Falko, Vladimir

N1 - ©2012 American Physical Society

PY - 2012/7/23

Y1 - 2012/7/23

N2 - We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature, and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magneticlike defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

AB - We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature, and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magneticlike defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

KW - graphene

U2 - 10.1103/PhysRevB.86.045436

DO - 10.1103/PhysRevB.86.045436

M3 - Journal article

VL - 86

JO - Physical review B

JF - Physical review B

SN - 1550-235X

IS - 4

M1 - 045436

ER -