TY - JOUR

T1 - Evidence for the Potential Barrier Height Reduction in Metal-Oxide-Metal Tunnel Junctions due to the Interface Dependent Metal-Induced-Gap-States

AU - Hosik, Lee

AU - Jung, Hyuntae

AU - Kim, Yongmin

AU - Jung, Kyooho

AU - Im, Hyunsik

AU - Pashkin, Yuri

AU - Astafiev, O.

AU - Tsai, J. S.

AU - Miyamoto, Yoshiyuki

PY - 2009

Y1 - 2009

N2 - We have performed transport measurements on Al and Nb based metal-oxide-metal tunnel junctions with an AlOx tunnel barrier and found a strong dependence of the effective potential barrier height on the oxide-metal interface properties. Our estimations of the barrier height based on a phenomenological Simmons' model are consistent with the values obtained from the first-principle calculations. The calculations clearly show that the barrier height is strongly affected by the formation of metal induced gap states originating from the hybridization between metallic bands and Al2O3 conduction band. These findings are important for nanoelectronic devices containing tunnel junctions with a thin insulating layer.

AB - We have performed transport measurements on Al and Nb based metal-oxide-metal tunnel junctions with an AlOx tunnel barrier and found a strong dependence of the effective potential barrier height on the oxide-metal interface properties. Our estimations of the barrier height based on a phenomenological Simmons' model are consistent with the values obtained from the first-principle calculations. The calculations clearly show that the barrier height is strongly affected by the formation of metal induced gap states originating from the hybridization between metallic bands and Al2O3 conduction band. These findings are important for nanoelectronic devices containing tunnel junctions with a thin insulating layer.

M3 - Meeting abstract

JO - American Physical Society, 2009 APS March Meeting, March 16-20, 2009

JF - American Physical Society, 2009 APS March Meeting, March 16-20, 2009

ER -