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Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers

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Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers. / Muten, James; Copeland, Alex; McCann, Edward.
In: Physical Review B: Condensed Matter and Materials Physics, Vol. 104, No. 3, 035404, 15.07.2021.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Muten, J, Copeland, A & McCann, E 2021, 'Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers', Physical Review B: Condensed Matter and Materials Physics, vol. 104, no. 3, 035404. https://doi.org/10.1103/PhysRevB.104.035404

APA

Muten, J., Copeland, A., & McCann, E. (2021). Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers. Physical Review B: Condensed Matter and Materials Physics, 104(3), Article 035404. https://doi.org/10.1103/PhysRevB.104.035404

Vancouver

Muten J, Copeland A, McCann E. Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers. Physical Review B: Condensed Matter and Materials Physics. 2021 Jul 15;104(3):035404. Epub 2021 Jul 2. doi: 10.1103/PhysRevB.104.035404

Author

Muten, James ; Copeland, Alex ; McCann, Edward. / Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers. In: Physical Review B: Condensed Matter and Materials Physics. 2021 ; Vol. 104, No. 3.

Bibtex

@article{86d7652f5bec44799a3fa654a156daea,
title = "Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers",
abstract = "We apply the mean-field Hartree Fock theory of gapped electronic states at charge neutrality in bilayer graphene to thin films of rhombohedral graphite with up to thirty layers. For the ground state, the order parameter (the separation of bands at the valley center) saturates to a constant non-zero value as the layer number increases, whereas the band gap decreases with layer number. We consider chiral symmetry breaking disorder in the form of random layer potentials and chiral preserving disorder in the form of random values of the interlayer coupling. The former reduces the magnitude of the mean band gap whereas the latter has a negligible effect, which is due to self-averaging within a film with a large number of layers. We determine the ground state in the presence of an individual stacking fault which results in two pairs of low-energy bands and we identify two separate order parameters. One of them determines the band gap at zero temperature, the other determines the critical temperature leading, overall, to a temperature dependence of the band gap that is distinct to that of pristine rhombohedral graphite. In the presence of stacking faults, each individual rhombohedral section with m layers contributes a pair of low-energy flat bands producing a peak in the Berry curvature located at a characteristic m-dependent wave vector. The Chern number per spin-valley flavor for the filled valence bands in the ground state is equal in magnitude to the total number of layers divided by two, the same value as for pristine rhombohedral graphite.",
author = "James Muten and Alex Copeland and Edward McCann",
note = "{\textcopyright} 2021 American Physical Society ",
year = "2021",
month = jul,
day = "15",
doi = "10.1103/PhysRevB.104.035404",
language = "English",
volume = "104",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "3",

}

RIS

TY - JOUR

T1 - Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers

AU - Muten, James

AU - Copeland, Alex

AU - McCann, Edward

N1 - © 2021 American Physical Society

PY - 2021/7/15

Y1 - 2021/7/15

N2 - We apply the mean-field Hartree Fock theory of gapped electronic states at charge neutrality in bilayer graphene to thin films of rhombohedral graphite with up to thirty layers. For the ground state, the order parameter (the separation of bands at the valley center) saturates to a constant non-zero value as the layer number increases, whereas the band gap decreases with layer number. We consider chiral symmetry breaking disorder in the form of random layer potentials and chiral preserving disorder in the form of random values of the interlayer coupling. The former reduces the magnitude of the mean band gap whereas the latter has a negligible effect, which is due to self-averaging within a film with a large number of layers. We determine the ground state in the presence of an individual stacking fault which results in two pairs of low-energy bands and we identify two separate order parameters. One of them determines the band gap at zero temperature, the other determines the critical temperature leading, overall, to a temperature dependence of the band gap that is distinct to that of pristine rhombohedral graphite. In the presence of stacking faults, each individual rhombohedral section with m layers contributes a pair of low-energy flat bands producing a peak in the Berry curvature located at a characteristic m-dependent wave vector. The Chern number per spin-valley flavor for the filled valence bands in the ground state is equal in magnitude to the total number of layers divided by two, the same value as for pristine rhombohedral graphite.

AB - We apply the mean-field Hartree Fock theory of gapped electronic states at charge neutrality in bilayer graphene to thin films of rhombohedral graphite with up to thirty layers. For the ground state, the order parameter (the separation of bands at the valley center) saturates to a constant non-zero value as the layer number increases, whereas the band gap decreases with layer number. We consider chiral symmetry breaking disorder in the form of random layer potentials and chiral preserving disorder in the form of random values of the interlayer coupling. The former reduces the magnitude of the mean band gap whereas the latter has a negligible effect, which is due to self-averaging within a film with a large number of layers. We determine the ground state in the presence of an individual stacking fault which results in two pairs of low-energy bands and we identify two separate order parameters. One of them determines the band gap at zero temperature, the other determines the critical temperature leading, overall, to a temperature dependence of the band gap that is distinct to that of pristine rhombohedral graphite. In the presence of stacking faults, each individual rhombohedral section with m layers contributes a pair of low-energy flat bands producing a peak in the Berry curvature located at a characteristic m-dependent wave vector. The Chern number per spin-valley flavor for the filled valence bands in the ground state is equal in magnitude to the total number of layers divided by two, the same value as for pristine rhombohedral graphite.

U2 - 10.1103/PhysRevB.104.035404

DO - 10.1103/PhysRevB.104.035404

M3 - Journal article

VL - 104

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 3

M1 - 035404

ER -