Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

Physics

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors. / Durrani, Zahid A. K.; Jones, Mervyn E.; Wang, Chen et al.
In: Nanotechnology, Vol. 28, No. 12, 125208, 23.02.2017.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Durrani, ZAK, Jones, ME, Wang, C, Liu, D & Griffiths, J 2017, 'Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors', Nanotechnology, vol. 28, no. 12, 125208. https://doi.org/10.1088/1361-6528/aa5ddd

APA

Durrani, Z. A. K., Jones, M. E., Wang, C., Liu, D., & Griffiths, J. (2017). Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors. Nanotechnology, 28(12), Article 125208. https://doi.org/10.1088/1361-6528/aa5ddd

Vancouver

Durrani ZAK, Jones ME, Wang C, Liu D, Griffiths J. Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors. Nanotechnology. 2017 Feb 23;28(12):125208. Epub 2017 Feb 2. doi: 10.1088/1361-6528/aa5ddd

Author

Durrani, Zahid A. K. ; Jones, Mervyn E. ; Wang, Chen et al. / Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors. In: Nanotechnology. 2017 ; Vol. 28, No. 12.

Bibtex

@article{12b331d8211245d4848f73d0bf2d5ebe,

title = "Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors",

abstract = "Single nanometre scale quantum dots (QDs) have significant potential for many 'beyond CMOS' nanoelectronics and quantum computation applications. The fabrication and measurement of few nanometre silicon point-contact QD single-electron transistors are reported, which both operate at room temperature (RT) and are fabricated using standard processes. By combining thin silicon-on-insulator wafers, specific device geometry, and controlled oxidation, <10 nm nanoscale point-contact channels are defined. In this limit of the point-contact approach, ultra-small, few nanometre scale QDs are formed, enabling RT measurement of the full QD characteristics, including excited states to be made. A remarkably large QD electron addition energy ~0.8 eV, and a quantum confinement energy ~0.3 eV, are observed, implying a QD only ~1.6 nm in size. In measurements of 19 RT devices, the extracted QD radius lies within a narrow band, from 0.8 to 2.35 nm, emphasising the single-nanometre scale of the QDs. These results demonstrate that with careful control, 'beyond CMOS' RT QD transistors can be produced using current 'conventional' semiconductor device fabrication techniques.",

keywords = "single electron transistor, quantum dot, nanodevices, room temperature single electron effects",

author = "Durrani, {Zahid A. K.} and Jones, {Mervyn E.} and Chen Wang and Dixi Liu and Jonathan Griffiths",

year = "2017",

month = feb,

day = "23",

doi = "10.1088/1361-6528/aa5ddd",

language = "English",

volume = "28",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "12",

}

RIS

TY - JOUR

T1 - Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

AU - Durrani, Zahid A. K.

AU - Jones, Mervyn E.

AU - Wang, Chen

AU - Liu, Dixi

AU - Griffiths, Jonathan

PY - 2017/2/23

Y1 - 2017/2/23

N2 - Single nanometre scale quantum dots (QDs) have significant potential for many 'beyond CMOS' nanoelectronics and quantum computation applications. The fabrication and measurement of few nanometre silicon point-contact QD single-electron transistors are reported, which both operate at room temperature (RT) and are fabricated using standard processes. By combining thin silicon-on-insulator wafers, specific device geometry, and controlled oxidation, <10 nm nanoscale point-contact channels are defined. In this limit of the point-contact approach, ultra-small, few nanometre scale QDs are formed, enabling RT measurement of the full QD characteristics, including excited states to be made. A remarkably large QD electron addition energy ~0.8 eV, and a quantum confinement energy ~0.3 eV, are observed, implying a QD only ~1.6 nm in size. In measurements of 19 RT devices, the extracted QD radius lies within a narrow band, from 0.8 to 2.35 nm, emphasising the single-nanometre scale of the QDs. These results demonstrate that with careful control, 'beyond CMOS' RT QD transistors can be produced using current 'conventional' semiconductor device fabrication techniques.

AB - Single nanometre scale quantum dots (QDs) have significant potential for many 'beyond CMOS' nanoelectronics and quantum computation applications. The fabrication and measurement of few nanometre silicon point-contact QD single-electron transistors are reported, which both operate at room temperature (RT) and are fabricated using standard processes. By combining thin silicon-on-insulator wafers, specific device geometry, and controlled oxidation, <10 nm nanoscale point-contact channels are defined. In this limit of the point-contact approach, ultra-small, few nanometre scale QDs are formed, enabling RT measurement of the full QD characteristics, including excited states to be made. A remarkably large QD electron addition energy ~0.8 eV, and a quantum confinement energy ~0.3 eV, are observed, implying a QD only ~1.6 nm in size. In measurements of 19 RT devices, the extracted QD radius lies within a narrow band, from 0.8 to 2.35 nm, emphasising the single-nanometre scale of the QDs. These results demonstrate that with careful control, 'beyond CMOS' RT QD transistors can be produced using current 'conventional' semiconductor device fabrication techniques.

KW - single electron transistor

KW - quantum dot

KW - nanodevices

KW - room temperature single electron effects

U2 - 10.1088/1361-6528/aa5ddd

DO - 10.1088/1361-6528/aa5ddd

M3 - Journal article

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 12

M1 - 125208

ER -

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