Home > Research > Publications & Outputs > Fabrication of Ultrasmall All-Nb Tunnel-Junctio...
View graph of relations

Fabrication of Ultrasmall All-Nb Tunnel-Junction Devices with Ion Beam-Oxidized Barriers

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Fabrication of Ultrasmall All-Nb Tunnel-Junction Devices with Ion Beam-Oxidized Barriers. / Im, Hyunsik; Pashkin, Yuri.
In: Journal of the Korean Physical Society, Vol. 48, No. 6, 2006, p. 1560-1564.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

APA

Vancouver

Im H, Pashkin Y. Fabrication of Ultrasmall All-Nb Tunnel-Junction Devices with Ion Beam-Oxidized Barriers. Journal of the Korean Physical Society. 2006;48(6):1560-1564.

Author

Im, Hyunsik ; Pashkin, Yuri. / Fabrication of Ultrasmall All-Nb Tunnel-Junction Devices with Ion Beam-Oxidized Barriers. In: Journal of the Korean Physical Society. 2006 ; Vol. 48, No. 6. pp. 1560-1564.

Bibtex

@article{d570c73c99844f68930cc472be5fd1c1,
title = "Fabrication of Ultrasmall All-Nb Tunnel-Junction Devices with Ion Beam-Oxidized Barriers",
abstract = "We report a new type of all-Nb tunnel junction and single electron transistor (SET) fabricated using conventional electron-beam lithography and angle evaporation combined with an ion beam oxidation technique to create a tunnel barrier between the Nb electrodes. Significantly improved reproducibility in fabrication is achieved compared with previous Nb/Al-AlOx/Nb structures. The basic parameters of the Nb/NbOx/Nb junctions, namely, the barrier height and width, are extracted from the temperature-dependent current-voltage characteristics. The transport characteristics of various all-Nb superconducting SETs with different tunnel barriers are presented and discussed. Clear gap features are observed, and a corresponding gap energy (DeltaNb) of up to 1.1 meV is obtained. From the transport characteristics of the Nb-based SET measured at sim40 mK in the normal state, we estimate the specific junction capacitance to be sim440 pm 50 fF/mum2. We also discuss how the quality ({it i.e.}, Tc) of the Nb stripes is affected by outgassing from the various resists used in the fabrication.",
author = "Hyunsik Im and Yuri Pashkin",
year = "2006",
language = "English",
volume = "48",
pages = "1560--1564",
journal = "Journal of the Korean Physical Society",
number = "6",

}

RIS

TY - JOUR

T1 - Fabrication of Ultrasmall All-Nb Tunnel-Junction Devices with Ion Beam-Oxidized Barriers

AU - Im, Hyunsik

AU - Pashkin, Yuri

PY - 2006

Y1 - 2006

N2 - We report a new type of all-Nb tunnel junction and single electron transistor (SET) fabricated using conventional electron-beam lithography and angle evaporation combined with an ion beam oxidation technique to create a tunnel barrier between the Nb electrodes. Significantly improved reproducibility in fabrication is achieved compared with previous Nb/Al-AlOx/Nb structures. The basic parameters of the Nb/NbOx/Nb junctions, namely, the barrier height and width, are extracted from the temperature-dependent current-voltage characteristics. The transport characteristics of various all-Nb superconducting SETs with different tunnel barriers are presented and discussed. Clear gap features are observed, and a corresponding gap energy (DeltaNb) of up to 1.1 meV is obtained. From the transport characteristics of the Nb-based SET measured at sim40 mK in the normal state, we estimate the specific junction capacitance to be sim440 pm 50 fF/mum2. We also discuss how the quality ({it i.e.}, Tc) of the Nb stripes is affected by outgassing from the various resists used in the fabrication.

AB - We report a new type of all-Nb tunnel junction and single electron transistor (SET) fabricated using conventional electron-beam lithography and angle evaporation combined with an ion beam oxidation technique to create a tunnel barrier between the Nb electrodes. Significantly improved reproducibility in fabrication is achieved compared with previous Nb/Al-AlOx/Nb structures. The basic parameters of the Nb/NbOx/Nb junctions, namely, the barrier height and width, are extracted from the temperature-dependent current-voltage characteristics. The transport characteristics of various all-Nb superconducting SETs with different tunnel barriers are presented and discussed. Clear gap features are observed, and a corresponding gap energy (DeltaNb) of up to 1.1 meV is obtained. From the transport characteristics of the Nb-based SET measured at sim40 mK in the normal state, we estimate the specific junction capacitance to be sim440 pm 50 fF/mum2. We also discuss how the quality ({it i.e.}, Tc) of the Nb stripes is affected by outgassing from the various resists used in the fabrication.

M3 - Journal article

VL - 48

SP - 1560

EP - 1564

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -