Research output: Contribution to Journal/Magazine › Journal article › peer-review
| <mark>Journal publication date</mark> | 20/04/2002 |
|---|---|
| <mark>Journal</mark> | Microwave and Optical Technology Letters |
| Issue number | 2 |
| Volume | 33 |
| Number of pages | 3 |
| Pages (from-to) | 104-106 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
Power gain definitions are fundamental parameters in the design of FET small-signal amplifiers. In this Letter, a simple and direct method to compute the various gain definitions of FET up to 60 GHz is demonstrated. A set of simple equations to compute the S parameters from the FET complete pi model are used. The power gain definitions are calculated from the S-parameter modules derived from these equations. (C) 2002 Wiley Periodicals, Inc.