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Fast computation of FET power gains

Research output: Contribution to Journal/MagazineJournal articlepeer-review

<mark>Journal publication date</mark>20/04/2002
<mark>Journal</mark>Microwave and Optical Technology Letters
Issue number2
Number of pages3
Pages (from-to)104-106
Publication StatusPublished
<mark>Original language</mark>English


Power gain definitions are fundamental parameters in the design of FET small-signal amplifiers. In this Letter, a simple and direct method to compute the various gain definitions of FET up to 60 GHz is demonstrated. A set of simple equations to compute the S parameters from the FET complete pi model are used. The power gain definitions are calculated from the S-parameter modules derived from these equations. (C) 2002 Wiley Periodicals, Inc.