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Fast computation of FET power gains

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Fast computation of FET power gains. / Paoloni, C .
In: Microwave and Optical Technology Letters, Vol. 33, No. 2, 20.04.2002, p. 104-106.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Paoloni, C 2002, 'Fast computation of FET power gains', Microwave and Optical Technology Letters, vol. 33, no. 2, pp. 104-106. https://doi.org/10.1002/mop.10235

APA

Paoloni, C. (2002). Fast computation of FET power gains. Microwave and Optical Technology Letters, 33(2), 104-106. https://doi.org/10.1002/mop.10235

Vancouver

Paoloni C. Fast computation of FET power gains. Microwave and Optical Technology Letters. 2002 Apr 20;33(2):104-106. doi: 10.1002/mop.10235

Author

Paoloni, C . / Fast computation of FET power gains. In: Microwave and Optical Technology Letters. 2002 ; Vol. 33, No. 2. pp. 104-106.

Bibtex

@article{00b499a9d2e5429aa0bbb4d02f460c15,
title = "Fast computation of FET power gains",
abstract = "Power gain definitions are fundamental parameters in the design of FET small-signal amplifiers. In this Letter, a simple and direct method to compute the various gain definitions of FET up to 60 GHz is demonstrated. A set of simple equations to compute the S parameters from the FET complete pi model are used. The power gain definitions are calculated from the S-parameter modules derived from these equations. (C) 2002 Wiley Periodicals, Inc.",
keywords = "microwave amplifiers, small signal gain",
author = "C Paoloni",
year = "2002",
month = apr,
day = "20",
doi = "10.1002/mop.10235",
language = "English",
volume = "33",
pages = "104--106",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley and Sons Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - Fast computation of FET power gains

AU - Paoloni, C

PY - 2002/4/20

Y1 - 2002/4/20

N2 - Power gain definitions are fundamental parameters in the design of FET small-signal amplifiers. In this Letter, a simple and direct method to compute the various gain definitions of FET up to 60 GHz is demonstrated. A set of simple equations to compute the S parameters from the FET complete pi model are used. The power gain definitions are calculated from the S-parameter modules derived from these equations. (C) 2002 Wiley Periodicals, Inc.

AB - Power gain definitions are fundamental parameters in the design of FET small-signal amplifiers. In this Letter, a simple and direct method to compute the various gain definitions of FET up to 60 GHz is demonstrated. A set of simple equations to compute the S parameters from the FET complete pi model are used. The power gain definitions are calculated from the S-parameter modules derived from these equations. (C) 2002 Wiley Periodicals, Inc.

KW - microwave amplifiers

KW - small signal gain

U2 - 10.1002/mop.10235

DO - 10.1002/mop.10235

M3 - Journal article

VL - 33

SP - 104

EP - 106

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 2

ER -