TY - JOUR

T1 - Films Stoichiometry Effects on the Electronic Transport Properties of Solution-Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

AU - Afouxenidis, D.

AU - Halcovitch, N.R.

AU - Milne, W.I.

AU - Nathan, A.

AU - Adamopoulos, G.

PY - 2020/4/1

Y1 - 2020/4/1

N2 - Spray-coated crystalline InZnOx-based semiconductors are investigated as a function of [In3+]:[Zn2+] and their performance as TFTs semiconducting channels. More precisely, it is demonstrated that optical, structural, and electron transport properties show a high degree of sensitivity to the films' stoichiometry; that is, the [In3+]:[Zn2+] atomic ratio that equally determines the amorphous or crystalline structure of the film. Yttrium co-doping of InZnOx with [In3+]:[Zn2+] atomic ratio of 6:4 shows that the YInZnOx structure and the key TFT parameters can further be engineered and improved in terms of the on-to-off current modulation ratio and, most importantly, the field effect mobility. It is finally demonstrated that the latter is in excess of 52 cm(2) V-1 s(-1) by combining crystalline YInZnOx and spray-coated MgO dielectrics. These results identify spray-coated crystalline YInZnOx as a viable TFT semiconducting channel material with respect to enhanced electrical performance and processing requirements in terms of simplicity and cost.

AB - Spray-coated crystalline InZnOx-based semiconductors are investigated as a function of [In3+]:[Zn2+] and their performance as TFTs semiconducting channels. More precisely, it is demonstrated that optical, structural, and electron transport properties show a high degree of sensitivity to the films' stoichiometry; that is, the [In3+]:[Zn2+] atomic ratio that equally determines the amorphous or crystalline structure of the film. Yttrium co-doping of InZnOx with [In3+]:[Zn2+] atomic ratio of 6:4 shows that the YInZnOx structure and the key TFT parameters can further be engineered and improved in terms of the on-to-off current modulation ratio and, most importantly, the field effect mobility. It is finally demonstrated that the latter is in excess of 52 cm(2) V-1 s(-1) by combining crystalline YInZnOx and spray-coated MgO dielectrics. These results identify spray-coated crystalline YInZnOx as a viable TFT semiconducting channel material with respect to enhanced electrical performance and processing requirements in terms of simplicity and cost.

KW - indium zinc oxide semiconductors

KW - solution-processed electronics

KW - spray pyrolysis

KW - thin film transistors

KW - Electron transport properties

KW - Field effect transistors

KW - II-VI semiconductors

KW - Magnesia

KW - Nanocrystalline materials

KW - Oxide films

KW - Oxide semiconductors

KW - Semiconducting zinc compounds

KW - Semiconductor doping

KW - Spray pyrolysis

KW - Stoichiometry

KW - Thin film circuits

KW - Thin film transistors

KW - Thin films

KW - Transport properties

KW - Yttrium

KW - Zinc oxide

KW - Crystalline semiconductors

KW - Crystalline structure

KW - Degree of sensitivity

KW - Electrical performance

KW - Electronic transport properties

KW - Field-effect mobilities

KW - Indium zinc oxides

KW - Solution-processed

KW - Indium compounds

U2 - 10.1002/aelm.201900976

DO - 10.1002/aelm.201900976

M3 - Journal article

VL - 6

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 4

M1 - 1900976

ER -