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Fundamental physics and practical realisation of mid-infrared photodetectors.

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Fundamental physics and practical realisation of mid-infrared photodetectors. / Krier, Anthony; Chakrabarti, Parthasarathi; Gao, Honghai et al.
In: Proceedings of SPIE, Vol. 5564, 10.2004, p. 92-104.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Krier, A, Chakrabarti, P, Gao, H, Mao, Y, Huang, X-L & Sherstnev, VV 2004, 'Fundamental physics and practical realisation of mid-infrared photodetectors.', Proceedings of SPIE, vol. 5564, pp. 92-104. https://doi.org/10.1117/12.555684

APA

Krier, A., Chakrabarti, P., Gao, H., Mao, Y., Huang, X.-L., & Sherstnev, V. V. (2004). Fundamental physics and practical realisation of mid-infrared photodetectors. Proceedings of SPIE, 5564, 92-104. https://doi.org/10.1117/12.555684

Vancouver

Krier A, Chakrabarti P, Gao H, Mao Y, Huang XL, Sherstnev VV. Fundamental physics and practical realisation of mid-infrared photodetectors. Proceedings of SPIE. 2004 Oct;5564:92-104. doi: 10.1117/12.555684

Author

Krier, Anthony ; Chakrabarti, Parthasarathi ; Gao, Honghai et al. / Fundamental physics and practical realisation of mid-infrared photodetectors. In: Proceedings of SPIE. 2004 ; Vol. 5564. pp. 92-104.

Bibtex

@article{09b625c78220411ea67da58cd818a877,
title = "Fundamental physics and practical realisation of mid-infrared photodetectors.",
abstract = "The fabrication and characterization of heterojunction phtodiodes for room temperature operation in the mid-infrared (2-5 µm) spectral range is described. Liquid phase epitaxy was employed to fabricate two different devices containing In0.97Ga0.03As and InAs0.89Sb0.11 active regions appropriate for phtodetection at 3.3 µm and 4.6 µm, corresponding to the absorption bands of methane and carbon monoxide. Basic detector characteristics have been measured and were found to compare favourbly with other available detectors in this wavelength range. A simple analystical model was developed to help design and study the corresponding device physics governing the performance of the detectors and was found to give good agreement with the experimentally measured values.",
author = "Anthony Krier and Parthasarathi Chakrabarti and Honghai Gao and Y. Mao and Xing-Liang Huang and Sherstnev, {Victor V.}",
year = "2004",
month = oct,
doi = "10.1117/12.555684",
language = "English",
volume = "5564",
pages = "92--104",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",

}

RIS

TY - JOUR

T1 - Fundamental physics and practical realisation of mid-infrared photodetectors.

AU - Krier, Anthony

AU - Chakrabarti, Parthasarathi

AU - Gao, Honghai

AU - Mao, Y.

AU - Huang, Xing-Liang

AU - Sherstnev, Victor V.

PY - 2004/10

Y1 - 2004/10

N2 - The fabrication and characterization of heterojunction phtodiodes for room temperature operation in the mid-infrared (2-5 µm) spectral range is described. Liquid phase epitaxy was employed to fabricate two different devices containing In0.97Ga0.03As and InAs0.89Sb0.11 active regions appropriate for phtodetection at 3.3 µm and 4.6 µm, corresponding to the absorption bands of methane and carbon monoxide. Basic detector characteristics have been measured and were found to compare favourbly with other available detectors in this wavelength range. A simple analystical model was developed to help design and study the corresponding device physics governing the performance of the detectors and was found to give good agreement with the experimentally measured values.

AB - The fabrication and characterization of heterojunction phtodiodes for room temperature operation in the mid-infrared (2-5 µm) spectral range is described. Liquid phase epitaxy was employed to fabricate two different devices containing In0.97Ga0.03As and InAs0.89Sb0.11 active regions appropriate for phtodetection at 3.3 µm and 4.6 µm, corresponding to the absorption bands of methane and carbon monoxide. Basic detector characteristics have been measured and were found to compare favourbly with other available detectors in this wavelength range. A simple analystical model was developed to help design and study the corresponding device physics governing the performance of the detectors and was found to give good agreement with the experimentally measured values.

U2 - 10.1117/12.555684

DO - 10.1117/12.555684

M3 - Journal article

VL - 5564

SP - 92

EP - 104

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

ER -