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    Rights statement: This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 191, 2019 DOI: 10.1016/j.solmat.2018.11.035

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GaSb-based solar cells for multi-junction integration on Si substrates

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GaSb-based solar cells for multi-junction integration on Si substrates. / Tournet, J.; Parola, S.; Vauthelin, A.; Montesdeoca Cardenes, D.; Soresi, S.; Martinez, F.; Lu, Q.; Cuminal, Y.; Carrington, P.J.; Décobert, J.; Krier, A.; Rouillard, Y.; Tournié, E.

In: Solar Energy Materials and Solar Cells, Vol. 191, 03.2019, p. 444-450.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Tournet, J, Parola, S, Vauthelin, A, Montesdeoca Cardenes, D, Soresi, S, Martinez, F, Lu, Q, Cuminal, Y, Carrington, PJ, Décobert, J, Krier, A, Rouillard, Y & Tournié, E 2019, 'GaSb-based solar cells for multi-junction integration on Si substrates', Solar Energy Materials and Solar Cells, vol. 191, pp. 444-450. https://doi.org/10.1016/j.solmat.2018.11.035

APA

Tournet, J., Parola, S., Vauthelin, A., Montesdeoca Cardenes, D., Soresi, S., Martinez, F., Lu, Q., Cuminal, Y., Carrington, P. J., Décobert, J., Krier, A., Rouillard, Y., & Tournié, E. (2019). GaSb-based solar cells for multi-junction integration on Si substrates. Solar Energy Materials and Solar Cells, 191, 444-450. https://doi.org/10.1016/j.solmat.2018.11.035

Vancouver

Tournet J, Parola S, Vauthelin A, Montesdeoca Cardenes D, Soresi S, Martinez F et al. GaSb-based solar cells for multi-junction integration on Si substrates. Solar Energy Materials and Solar Cells. 2019 Mar;191:444-450. https://doi.org/10.1016/j.solmat.2018.11.035

Author

Tournet, J. ; Parola, S. ; Vauthelin, A. ; Montesdeoca Cardenes, D. ; Soresi, S. ; Martinez, F. ; Lu, Q. ; Cuminal, Y. ; Carrington, P.J. ; Décobert, J. ; Krier, A. ; Rouillard, Y. ; Tournié, E. / GaSb-based solar cells for multi-junction integration on Si substrates. In: Solar Energy Materials and Solar Cells. 2019 ; Vol. 191. pp. 444-450.

Bibtex

@article{a107aa61adf2421cb7d5e0fac51b8de5,
title = "GaSb-based solar cells for multi-junction integration on Si substrates",
abstract = "We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.",
author = "J. Tournet and S. Parola and A. Vauthelin and {Montesdeoca Cardenes}, D. and S. Soresi and F. Martinez and Q. Lu and Y. Cuminal and P.J. Carrington and J. D{\'e}cobert and A. Krier and Y. Rouillard and E. Tourni{\'e}",
note = "This is the author{\textquoteright}s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 191, 2019 DOI: 10.1016/j.solmat.2018.11.035",
year = "2019",
month = mar,
doi = "10.1016/j.solmat.2018.11.035",
language = "English",
volume = "191",
pages = "444--450",
journal = "Solar Energy Materials and Solar Cells",
issn = "0927-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - GaSb-based solar cells for multi-junction integration on Si substrates

AU - Tournet, J.

AU - Parola, S.

AU - Vauthelin, A.

AU - Montesdeoca Cardenes, D.

AU - Soresi, S.

AU - Martinez, F.

AU - Lu, Q.

AU - Cuminal, Y.

AU - Carrington, P.J.

AU - Décobert, J.

AU - Krier, A.

AU - Rouillard, Y.

AU - Tournié, E.

N1 - This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 191, 2019 DOI: 10.1016/j.solmat.2018.11.035

PY - 2019/3

Y1 - 2019/3

N2 - We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

AB - We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90% efficiency (AM1.5G). The preparation, growth and manufacturing procedures were then adapted to create the GaSb-on-Si solar cell. The hybrid device resulted in a degraded efficiency for which comparison between experimental and simulated data revealed dominant non-radiative recombination processes. Material and electrical characterization also highlighted the impact of anti-phase domains and boundaries and threading dislocation density on the shunt resistance of the cell. Nevertheless, the GaSb-on-Si cell performance is close to recent results on the integration of GaSb solar cells on GaAs, despite a much larger lattice mismatch (12% vs 8%). Routes for improvement, concerning the material quality and cell structure, are proposed. This work lays the foundations of a GaSb-based multi-junction solar cell monolithically integrated on Si.

U2 - 10.1016/j.solmat.2018.11.035

DO - 10.1016/j.solmat.2018.11.035

M3 - Journal article

VL - 191

SP - 444

EP - 450

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

SN - 0927-0248

ER -