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Gate-tunable spatial modulation of localized plasmon resonances

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Gate-tunable spatial modulation of localized plasmon resonances. / Arcangeli, Andrea; Rossella, Francesco; Tomadin, Andrea et al.
In: Nano Letters, Vol. 16, No. 9, 14.09.2016, p. 5688-5693.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Arcangeli, A, Rossella, F, Tomadin, A, Xu, J, Ercolani, D, Sorba, L, Beltram, F, Tredicucci, A, Polini, M & Roddaro, S 2016, 'Gate-tunable spatial modulation of localized plasmon resonances', Nano Letters, vol. 16, no. 9, pp. 5688-5693. https://doi.org/10.1021/acs.nanolett.6b02351

APA

Arcangeli, A., Rossella, F., Tomadin, A., Xu, J., Ercolani, D., Sorba, L., Beltram, F., Tredicucci, A., Polini, M., & Roddaro, S. (2016). Gate-tunable spatial modulation of localized plasmon resonances. Nano Letters, 16(9), 5688-5693. https://doi.org/10.1021/acs.nanolett.6b02351

Vancouver

Arcangeli A, Rossella F, Tomadin A, Xu J, Ercolani D, Sorba L et al. Gate-tunable spatial modulation of localized plasmon resonances. Nano Letters. 2016 Sept 14;16(9):5688-5693. Epub 2016 Aug 1. doi: 10.1021/acs.nanolett.6b02351

Author

Arcangeli, Andrea ; Rossella, Francesco ; Tomadin, Andrea et al. / Gate-tunable spatial modulation of localized plasmon resonances. In: Nano Letters. 2016 ; Vol. 16, No. 9. pp. 5688-5693.

Bibtex

@article{aa0347b0d5624b6ba7d2ffda85469435,
title = "Gate-tunable spatial modulation of localized plasmon resonances",
abstract = "We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in the mid-infrared region. We adopt InAs nanowires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.",
author = "Andrea Arcangeli and Francesco Rossella and Andrea Tomadin and Jihua Xu and Daniele Ercolani and Lucia Sorba and Fabio Beltram and Alessandro Tredicucci and Marco Polini and Stefano Roddaro",
year = "2016",
month = sep,
day = "14",
doi = "10.1021/acs.nanolett.6b02351",
language = "English",
volume = "16",
pages = "5688--5693",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "9",

}

RIS

TY - JOUR

T1 - Gate-tunable spatial modulation of localized plasmon resonances

AU - Arcangeli, Andrea

AU - Rossella, Francesco

AU - Tomadin, Andrea

AU - Xu, Jihua

AU - Ercolani, Daniele

AU - Sorba, Lucia

AU - Beltram, Fabio

AU - Tredicucci, Alessandro

AU - Polini, Marco

AU - Roddaro, Stefano

PY - 2016/9/14

Y1 - 2016/9/14

N2 - We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in the mid-infrared region. We adopt InAs nanowires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.

AB - We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in the mid-infrared region. We adopt InAs nanowires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.

U2 - 10.1021/acs.nanolett.6b02351

DO - 10.1021/acs.nanolett.6b02351

M3 - Journal article

VL - 16

SP - 5688

EP - 5693

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 9

ER -