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Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation

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Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation. / Zhu, Zhifu ; Zou, Jijun; Sun, Zhijia et al.

In: Nuclear Science and Techniques, Vol. 33, 85, 13.07.2022.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Zhu, Z, Zou, J, Sun, Z, Huang, H, Xiu, Q, Zhang, Z, Gan, Y, Guo, C, Wang, S, Yue, X & Kong, G 2022, 'Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation', Nuclear Science and Techniques, vol. 33, 85. https://doi.org/10.1007/s41365-022-01065-3

APA

Zhu, Z., Zou, J., Sun, Z., Huang, H., Xiu, Q., Zhang, Z., Gan, Y., Guo, C., Wang, S., Yue, X., & Kong, G. (2022). Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation. Nuclear Science and Techniques, 33, [85]. https://doi.org/10.1007/s41365-022-01065-3

Vancouver

Zhu Z, Zou J, Sun Z, Huang H, Xiu Q, Zhang Z et al. Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation. Nuclear Science and Techniques. 2022 Jul 13;33:85. doi: 10.1007/s41365-022-01065-3

Author

Zhu, Zhifu ; Zou, Jijun ; Sun, Zhijia et al. / Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation. In: Nuclear Science and Techniques. 2022 ; Vol. 33.

Bibtex

@article{68a83d015c384291a6e7caaa81336722,
title = "Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation",
abstract = "p-i-n AlxGa1-xAs/GaAs detectors with graded compositions and graded doping were grown and prepared. From the current–voltage and capacitance–voltage measurement results, the devices had good p–n junction diode characteristics, and the electric field strength under an unbiased voltage was 1.7 9 105 Vcm-1. The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%, respectively. In this study, we created the most advanced and promising state-of-the-art unbiased detector reported to date.",
keywords = "Graded composition, Graded doping, Detector, p-i-n AlxGa1−xAs/GaAs",
author = "Zhifu Zhu and Jijun Zou and Zhijia Sun and He Huang and Qinglei Xiu and Zhongming Zhang and Yong Gan and Chenxian Guo and Shaotang Wang and Xiuping Yue and Guoli Kong",
year = "2022",
month = jul,
day = "13",
doi = "10.1007/s41365-022-01065-3",
language = "English",
volume = "33",
journal = "Nuclear Science and Techniques",

}

RIS

TY - JOUR

T1 - Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation

AU - Zhu, Zhifu

AU - Zou, Jijun

AU - Sun, Zhijia

AU - Huang, He

AU - Xiu, Qinglei

AU - Zhang, Zhongming

AU - Gan, Yong

AU - Guo, Chenxian

AU - Wang, Shaotang

AU - Yue, Xiuping

AU - Kong, Guoli

PY - 2022/7/13

Y1 - 2022/7/13

N2 - p-i-n AlxGa1-xAs/GaAs detectors with graded compositions and graded doping were grown and prepared. From the current–voltage and capacitance–voltage measurement results, the devices had good p–n junction diode characteristics, and the electric field strength under an unbiased voltage was 1.7 9 105 Vcm-1. The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%, respectively. In this study, we created the most advanced and promising state-of-the-art unbiased detector reported to date.

AB - p-i-n AlxGa1-xAs/GaAs detectors with graded compositions and graded doping were grown and prepared. From the current–voltage and capacitance–voltage measurement results, the devices had good p–n junction diode characteristics, and the electric field strength under an unbiased voltage was 1.7 9 105 Vcm-1. The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%, respectively. In this study, we created the most advanced and promising state-of-the-art unbiased detector reported to date.

KW - Graded composition

KW - Graded doping

KW - Detector

KW - p-i-n AlxGa1−xAs/GaAs

U2 - 10.1007/s41365-022-01065-3

DO - 10.1007/s41365-022-01065-3

M3 - Journal article

VL - 33

JO - Nuclear Science and Techniques

JF - Nuclear Science and Techniques

M1 - 85

ER -