Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation
AU - Zhu, Zhifu
AU - Zou, Jijun
AU - Sun, Zhijia
AU - Huang, He
AU - Xiu, Qinglei
AU - Zhang, Zhongming
AU - Gan, Yong
AU - Guo, Chenxian
AU - Wang, Shaotang
AU - Yue, Xiuping
AU - Kong, Guoli
PY - 2022/7/13
Y1 - 2022/7/13
N2 - p-i-n AlxGa1-xAs/GaAs detectors with graded compositions and graded doping were grown and prepared. From the current–voltage and capacitance–voltage measurement results, the devices had good p–n junction diode characteristics, and the electric field strength under an unbiased voltage was 1.7 9 105 Vcm-1. The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%, respectively. In this study, we created the most advanced and promising state-of-the-art unbiased detector reported to date.
AB - p-i-n AlxGa1-xAs/GaAs detectors with graded compositions and graded doping were grown and prepared. From the current–voltage and capacitance–voltage measurement results, the devices had good p–n junction diode characteristics, and the electric field strength under an unbiased voltage was 1.7 9 105 Vcm-1. The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%, respectively. In this study, we created the most advanced and promising state-of-the-art unbiased detector reported to date.
KW - Graded composition
KW - Graded doping
KW - Detector
KW - p-i-n AlxGa1−xAs/GaAs
U2 - 10.1007/s41365-022-01065-3
DO - 10.1007/s41365-022-01065-3
M3 - Journal article
VL - 33
JO - Nuclear Science and Techniques
JF - Nuclear Science and Techniques
M1 - 85
ER -