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Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors. / Cao, Peng; Wang, Tiancai; Peng, Hongling et al.
In: Materials, Vol. 16, No. 13, 4538, 23.06.2023.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Cao, P, Wang, T, Peng, H, Zhuang, Q & Zheng, W 2023, 'Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors', Materials, vol. 16, no. 13, 4538. https://doi.org/10.3390/ma16134538

APA

Cao, P., Wang, T., Peng, H., Zhuang, Q., & Zheng, W. (2023). Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors. Materials, 16(13), Article 4538. https://doi.org/10.3390/ma16134538

Vancouver

Cao P, Wang T, Peng H, Zhuang Q, Zheng W. Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors. Materials. 2023 Jun 23;16(13):4538. doi: 10.3390/ma16134538

Author

Cao, Peng ; Wang, Tiancai ; Peng, Hongling et al. / Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors. In: Materials. 2023 ; Vol. 16, No. 13.

Bibtex

@article{9fbc94a8d7a94a438bc457269706ca87,
title = "Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors",
abstract = "Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb substrates and InP substrates are demonstrated. The devices have a pBn structure that employs an AlGaAsSb thin layer as the electron barrier to suppress dark current density. The strain effect on the electrical performance of the devices was specifically studied through the growth of the pBn structure on different substrates, e.g., InP and GaSb, via a specific buffering technique to optimize material properties and minimize dark current. A lower device dark current density, down to 1 × 10−2 A/cm2 at room temperature (295 K), was achieved for the devices grown on the GaSb substrate compared to that of the devices on the InP substrate (8.6 × 10−2 A/cm2). The improved properties of the high-In component InGaAs layer and the AlGaAsSb electron barrier give rise to the low dark current of the photodetector device.",
keywords = "MBE growth, dark current, InGaAs",
author = "Peng Cao and Tiancai Wang and Hongling Peng and Qiandong Zhuang and Wanhua Zheng",
year = "2023",
month = jun,
day = "23",
doi = "10.3390/ma16134538",
language = "English",
volume = "16",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "13",

}

RIS

TY - JOUR

T1 - Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In 0.8 Ga 0.2 As Photodetectors

AU - Cao, Peng

AU - Wang, Tiancai

AU - Peng, Hongling

AU - Zhuang, Qiandong

AU - Zheng, Wanhua

PY - 2023/6/23

Y1 - 2023/6/23

N2 - Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb substrates and InP substrates are demonstrated. The devices have a pBn structure that employs an AlGaAsSb thin layer as the electron barrier to suppress dark current density. The strain effect on the electrical performance of the devices was specifically studied through the growth of the pBn structure on different substrates, e.g., InP and GaSb, via a specific buffering technique to optimize material properties and minimize dark current. A lower device dark current density, down to 1 × 10−2 A/cm2 at room temperature (295 K), was achieved for the devices grown on the GaSb substrate compared to that of the devices on the InP substrate (8.6 × 10−2 A/cm2). The improved properties of the high-In component InGaAs layer and the AlGaAsSb electron barrier give rise to the low dark current of the photodetector device.

AB - Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb substrates and InP substrates are demonstrated. The devices have a pBn structure that employs an AlGaAsSb thin layer as the electron barrier to suppress dark current density. The strain effect on the electrical performance of the devices was specifically studied through the growth of the pBn structure on different substrates, e.g., InP and GaSb, via a specific buffering technique to optimize material properties and minimize dark current. A lower device dark current density, down to 1 × 10−2 A/cm2 at room temperature (295 K), was achieved for the devices grown on the GaSb substrate compared to that of the devices on the InP substrate (8.6 × 10−2 A/cm2). The improved properties of the high-In component InGaAs layer and the AlGaAsSb electron barrier give rise to the low dark current of the photodetector device.

KW - MBE growth

KW - dark current

KW - InGaAs

U2 - 10.3390/ma16134538

DO - 10.3390/ma16134538

M3 - Journal article

VL - 16

JO - Materials

JF - Materials

SN - 1996-1944

IS - 13

M1 - 4538

ER -