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Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs. / Harrison, Samuel; Young, Matthew; Hodgson, Peter David et al.
In: Physical review B, Vol. 93, 085302, 02.02.2016.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Harrison, S, Young, M, Hodgson, PD, Young, RJ, Hayne, M, Danos, E, Schliwa, A, Strittmatter, A, Lenz, A, Eisele, H, Pohl, U & Bimberg, D 2016, 'Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs', Physical review B, vol. 93, 085302. https://doi.org/10.1103/PhysRevB.93.085302

APA

Harrison, S., Young, M., Hodgson, P. D., Young, R. J., Hayne, M., Danos, E., Schliwa, A., Strittmatter, A., Lenz, A., Eisele, H., Pohl, U., & Bimberg, D. (2016). Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs. Physical review B, 93, Article 085302. https://doi.org/10.1103/PhysRevB.93.085302

Vancouver

Harrison S, Young M, Hodgson PD, Young RJ, Hayne M, Danos E et al. Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs. Physical review B. 2016 Feb 2;93:085302. doi: 10.1103/PhysRevB.93.085302

Author

Harrison, Samuel ; Young, Matthew ; Hodgson, Peter David et al. / Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs. In: Physical review B. 2016 ; Vol. 93.

Bibtex

@article{e23fea6086204b9a9120a5e76ce420e3,
title = "Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs",
abstract = "Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k⋅p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed.",
author = "Samuel Harrison and Matthew Young and Hodgson, {Peter David} and Young, {Robert James} and Manus Hayne and Eleftherios Danos and A. Schliwa and Andre Strittmatter and Andrea Lenz and Holger Eisele and Udo Pohl and Dieter Bimberg",
note = "{\textcopyright}2016 American Physical Society",
year = "2016",
month = feb,
day = "2",
doi = "10.1103/PhysRevB.93.085302",
language = "English",
volume = "93",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

AU - Harrison, Samuel

AU - Young, Matthew

AU - Hodgson, Peter David

AU - Young, Robert James

AU - Hayne, Manus

AU - Danos, Eleftherios

AU - Schliwa, A.

AU - Strittmatter, Andre

AU - Lenz, Andrea

AU - Eisele, Holger

AU - Pohl, Udo

AU - Bimberg, Dieter

N1 - ©2016 American Physical Society

PY - 2016/2/2

Y1 - 2016/2/2

N2 - Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k⋅p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed.

AB - Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k⋅p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed.

U2 - 10.1103/PhysRevB.93.085302

DO - 10.1103/PhysRevB.93.085302

M3 - Journal article

VL - 93

JO - Physical review B

JF - Physical review B

SN - 1098-0121

M1 - 085302

ER -