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Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition. / Zhu, Zhifu; Zhang, Zhongming; Wang, Shaotang et al.
In: Crystal Growth and Design, 26.09.2023.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhu, Z, Zhang, Z, Wang, S, Zou, J, Gan, Y, Yang, R, Zhang, Y & Long, B 2023, 'Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition', Crystal Growth and Design. https://doi.org/10.1021/acs.cgd.2c01545

APA

Zhu, Z., Zhang, Z., Wang, S., Zou, J., Gan, Y., Yang, R., Zhang, Y., & Long, B. (2023). Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition. Crystal Growth and Design. Advance online publication. https://doi.org/10.1021/acs.cgd.2c01545

Vancouver

Zhu Z, Zhang Z, Wang S, Zou J, Gan Y, Yang R et al. Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition. Crystal Growth and Design. 2023 Sept 26. Epub 2023 Sept 26. doi: 10.1021/acs.cgd.2c01545

Author

Zhu, Zhifu ; Zhang, Zhongming ; Wang, Shaotang et al. / Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition. In: Crystal Growth and Design. 2023.

Bibtex

@article{8a5b6a4526fc407caa89139df14c5b6c,
title = "Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition",
abstract = "Hexagonal boron nitride (h-BN) with a certain thickness has wide applications in semiconductor electronic devices. In this study, the relationship between the amount of ammonia borane and the thickness of h-BN films was investigated via low-pressure chemical vapor deposition (LPCVD) on a noncatalytic c-plane Al2O3 substrate. Through various characterization methods, the grown film was confirmed to be h-BN. The effect of the precursor mass on the growth thickness of the h-BN film was studied, and it was found that the precursor mass significantly affected the growth rate of the h-BN film. The results from SEM show that the amount of ammonia borane is 2000 mg and a 1.295-μm h-BN film is obtained. It will provide an experimental reference for the growth of thicker h-BN materials to prepare high-efficiency neutron detectors for radiation detection.",
keywords = "Condensed Matter Physics, General Materials Science, General Chemistry",
author = "Zhifu Zhu and Zhongming Zhang and Shaotang Wang and Jijun Zou and Yong Gan and Ruibin Yang and Yang Zhang and Bingxu Long",
year = "2023",
month = sep,
day = "26",
doi = "10.1021/acs.cgd.2c01545",
language = "English",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",

}

RIS

TY - JOUR

T1 - Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition

AU - Zhu, Zhifu

AU - Zhang, Zhongming

AU - Wang, Shaotang

AU - Zou, Jijun

AU - Gan, Yong

AU - Yang, Ruibin

AU - Zhang, Yang

AU - Long, Bingxu

PY - 2023/9/26

Y1 - 2023/9/26

N2 - Hexagonal boron nitride (h-BN) with a certain thickness has wide applications in semiconductor electronic devices. In this study, the relationship between the amount of ammonia borane and the thickness of h-BN films was investigated via low-pressure chemical vapor deposition (LPCVD) on a noncatalytic c-plane Al2O3 substrate. Through various characterization methods, the grown film was confirmed to be h-BN. The effect of the precursor mass on the growth thickness of the h-BN film was studied, and it was found that the precursor mass significantly affected the growth rate of the h-BN film. The results from SEM show that the amount of ammonia borane is 2000 mg and a 1.295-μm h-BN film is obtained. It will provide an experimental reference for the growth of thicker h-BN materials to prepare high-efficiency neutron detectors for radiation detection.

AB - Hexagonal boron nitride (h-BN) with a certain thickness has wide applications in semiconductor electronic devices. In this study, the relationship between the amount of ammonia borane and the thickness of h-BN films was investigated via low-pressure chemical vapor deposition (LPCVD) on a noncatalytic c-plane Al2O3 substrate. Through various characterization methods, the grown film was confirmed to be h-BN. The effect of the precursor mass on the growth thickness of the h-BN film was studied, and it was found that the precursor mass significantly affected the growth rate of the h-BN film. The results from SEM show that the amount of ammonia borane is 2000 mg and a 1.295-μm h-BN film is obtained. It will provide an experimental reference for the growth of thicker h-BN materials to prepare high-efficiency neutron detectors for radiation detection.

KW - Condensed Matter Physics

KW - General Materials Science

KW - General Chemistry

U2 - 10.1021/acs.cgd.2c01545

DO - 10.1021/acs.cgd.2c01545

M3 - Journal article

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

ER -