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  • Post print Robson Appl Mater Interfaces 5 3241 (2013)

    Rights statement: “This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/am400270w

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High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

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High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy. / Robson, Alex; Grishin, Ilja; Young, Robert et al.
In: ACS Applied Materials and Interfaces, Vol. 5, No. 8, 2013, p. 3241-3245.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Robson, A, Grishin, I, Young, R, Sanchez, AM, Kolosov, O & Hayne, M 2013, 'High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy', ACS Applied Materials and Interfaces, vol. 5, no. 8, pp. 3241-3245. https://doi.org/10.1021/am400270w

APA

Robson, A., Grishin, I., Young, R., Sanchez, A. M., Kolosov, O., & Hayne, M. (2013). High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy. ACS Applied Materials and Interfaces, 5(8), 3241-3245. https://doi.org/10.1021/am400270w

Vancouver

Robson A, Grishin I, Young R, Sanchez AM, Kolosov O, Hayne M. High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy. ACS Applied Materials and Interfaces. 2013;5(8):3241-3245. Epub 2013 Mar 25. doi: 10.1021/am400270w

Author

Robson, Alex ; Grishin, Ilja ; Young, Robert et al. / High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 8. pp. 3241-3245.

Bibtex

@article{12cf5a5a70a54696942dab9b39031a76,
title = "High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy",
abstract = "A novel method of sample cross-sectioning, beam-exit Ar-ion cross-sectional polishing, has been combined with scanning probe microscopy to study thin AlxGa1-xAs/GaAs layers. Additional contrast enhancement via a citric acid/hydrogen peroxide etch allows us to report the observation of layers as thin as 1 nm. Layer thickness measurements agree with transmission electron microscopy (TEM) data to 0.1 ± 0.2 nm, making this a very promising low-cost method for nanoscale analysis of semiconductor heterostructures.",
keywords = "Scanning probe microscopy , cross-sectional analysis, semiconductor nanostructure layers , transmission electron microscopy, nanoscale metrology, selective etching",
author = "Alex Robson and Ilja Grishin and Robert Young and Sanchez, {A. M.} and Oleg Kolosov and Manus Hayne",
note = "“This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright {\textcopyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/am400270w",
year = "2013",
doi = "10.1021/am400270w",
language = "English",
volume = "5",
pages = "3241--3245",
journal = "ACS Applied Materials and Interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "8",

}

RIS

TY - JOUR

T1 - High-accuracy analysis of nanoscale semiconductor layers using beam-exit Ar-ion polishing and scanning probe microscopy

AU - Robson, Alex

AU - Grishin, Ilja

AU - Young, Robert

AU - Sanchez, A. M.

AU - Kolosov, Oleg

AU - Hayne, Manus

N1 - “This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/am400270w

PY - 2013

Y1 - 2013

N2 - A novel method of sample cross-sectioning, beam-exit Ar-ion cross-sectional polishing, has been combined with scanning probe microscopy to study thin AlxGa1-xAs/GaAs layers. Additional contrast enhancement via a citric acid/hydrogen peroxide etch allows us to report the observation of layers as thin as 1 nm. Layer thickness measurements agree with transmission electron microscopy (TEM) data to 0.1 ± 0.2 nm, making this a very promising low-cost method for nanoscale analysis of semiconductor heterostructures.

AB - A novel method of sample cross-sectioning, beam-exit Ar-ion cross-sectional polishing, has been combined with scanning probe microscopy to study thin AlxGa1-xAs/GaAs layers. Additional contrast enhancement via a citric acid/hydrogen peroxide etch allows us to report the observation of layers as thin as 1 nm. Layer thickness measurements agree with transmission electron microscopy (TEM) data to 0.1 ± 0.2 nm, making this a very promising low-cost method for nanoscale analysis of semiconductor heterostructures.

KW - Scanning probe microscopy

KW - cross-sectional analysis

KW - semiconductor nanostructure layers

KW - transmission electron microscopy

KW - nanoscale metrology

KW - selective etching

U2 - 10.1021/am400270w

DO - 10.1021/am400270w

M3 - Journal article

VL - 5

SP - 3241

EP - 3245

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

SN - 1944-8244

IS - 8

ER -