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High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air

Research output: Contribution to Journal/MagazineJournal articlepeer-review

  • George Adamopoulos
  • Stuart Thomas
  • Paul H. Woebkenberg
  • Donal D. C. Bradley
  • Martyn A. McLachlan
  • Thomas D. Anthopoulos
<mark>Journal publication date</mark>26/04/2011
<mark>Journal</mark>Advanced Materials
Issue number16
Number of pages5
Pages (from-to)1894-1898
Publication StatusPublished
<mark>Original language</mark>English


Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).