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Harvard
Adamopoulos, G, Thomas, S, Woebkenberg, PH, Bradley, DDC, McLachlan, MA & Anthopoulos, TD 2011, '
High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air',
Advanced Materials, vol. 23, no. 16, pp. 1894-1898.
https://doi.org/10.1002/adma.201003935
APA
Adamopoulos, G., Thomas, S., Woebkenberg, P. H., Bradley, D. D. C., McLachlan, M. A., & Anthopoulos, T. D. (2011).
High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air.
Advanced Materials,
23(16), 1894-1898.
https://doi.org/10.1002/adma.201003935
Vancouver
Author
Bibtex
@article{de85f22b7970466f9903d4ff74e47efd,
title = "High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air",
abstract = "Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).",
keywords = "oxide transistors, ZnO , high-k dielectrics , spray pyrolysis",
author = "George Adamopoulos and Stuart Thomas and Woebkenberg, {Paul H.} and Bradley, {Donal D. C.} and McLachlan, {Martyn A.} and Anthopoulos, {Thomas D.}",
year = "2011",
month = apr,
day = "26",
doi = "10.1002/adma.201003935",
language = "English",
volume = "23",
pages = "1894--1898",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "16",
}
RIS
TY - JOUR
T1 - High-Mobility Low-Voltage ZnO and Li-Doped ZnO Transistors Based on ZrO2 High-k Dielectric Grown by Spray Pyrolysis in Ambient Air
AU - Adamopoulos, George
AU - Thomas, Stuart
AU - Woebkenberg, Paul H.
AU - Bradley, Donal D. C.
AU - McLachlan, Martyn A.
AU - Anthopoulos, Thomas D.
PY - 2011/4/26
Y1 - 2011/4/26
N2 - Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).
AB - Sequential layers of the high-k dielectric ZrO2 and the electron transporting semiconductors ZnO and Li-doped ZnO are deposited onto conductive indium tin oxide electrodes using spray pyrolysis. With these structures, thin-film transistors are fabricated with operating voltages below 6 V and maximum electron mobilities on the order of 85 cm(2) V-1 s(-1).
KW - oxide transistors
KW - ZnO
KW - high-k dielectrics
KW - spray pyrolysis
U2 - 10.1002/adma.201003935
DO - 10.1002/adma.201003935
M3 - Journal article
VL - 23
SP - 1894
EP - 1898
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 16
ER -
