Hot electrons modulation of third harmonic generation in graphene

Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

Published

Standard

Hot electrons modulation of third harmonic generation in graphene. / Soavi, G.; Wang, G.; Rostami, H. et al.
2019. Paper presented at The European Conference on Lasers and Electro-Optics 2019, Munich, Germany.

Research output: Contribution to conference - Without ISBN/ISSN › Conference paper › peer-review

Harvard

Soavi, G, Wang, G, Rostami, H, Tomadin, A, Balci, O, Paradisanos, I, Pogna, EAA, Cerullo, G, Lidorikis, E, Polini, M & Ferrari, AC 2019, 'Hot electrons modulation of third harmonic generation in graphene', Paper presented at The European Conference on Lasers and Electro-Optics 2019, Munich, Germany, 23/06/19 - 27/06/19.

APA

Soavi, G., Wang, G., Rostami, H., Tomadin, A., Balci, O., Paradisanos, I., Pogna, E. A. A., Cerullo, G., Lidorikis, E., Polini, M., & Ferrari, A. C. (2019). Hot electrons modulation of third harmonic generation in graphene. Paper presented at The European Conference on Lasers and Electro-Optics 2019, Munich, Germany.

Vancouver

Soavi G, Wang G, Rostami H, Tomadin A, Balci O, Paradisanos I et al.. Hot electrons modulation of third harmonic generation in graphene. 2019. Paper presented at The European Conference on Lasers and Electro-Optics 2019, Munich, Germany.

Author

Soavi, G. ; Wang, G. ; Rostami, H. et al. / Hot electrons modulation of third harmonic generation in graphene. Paper presented at The European Conference on Lasers and Electro-Optics 2019, Munich, Germany.

Bibtex

@conference{b143d903cd834f6e88bf0274f130cce5,

title = "Hot electrons modulation of third harmonic generation in graphene",

abstract = "Hot-electrons dominate the ultrafast (∼fs-ps) optical and electronic properties of metals and semiconductors [1-2] and they are exploited in a variety of applications including photovoltaics and photodetection. Here we perform power-dependent third harmonic generation (THG) measurements on gated single layer graphene (SLG) and we show that hot-electrons modulate significantly the power-law dependence of THG, inducing a large deviation from the expected cubic power-law. We use a Chemical Vapor Deposition (CVD) SLG sample transferred on Fused Silica (FS) and gated by ionic liquid (IL), Fig.1(a). We excite the sample with the idler beam of an Optical Parametric Oscillator (OPO, Coherent) at a photon energy of ħω0=0.69eV. The OPO is seeded by a mode-locked Ti:Sa laser (Coherent) with 150fs pulse duration and 80MHz repetition rate. The OPO idler spot-size is∼4.7µm and the pulse duration ∼300fs.",

author = "G. Soavi and G. Wang and H. Rostami and A. Tomadin and O. Balci and I. Paradisanos and E.A.A. Pogna and G. Cerullo and E. Lidorikis and M. Polini and A.C. Ferrari",

note = "Export Date: 21 May 2020; The European Conference on Lasers and Electro-Optics 2019, CLEO Europe 2019 ; Conference date: 23-06-2019 Through 27-06-2019",

year = "2019",

month = jun,

day = "27",

language = "English",

}

RIS

TY - CONF

T1 - Hot electrons modulation of third harmonic generation in graphene

AU - Soavi, G.

AU - Wang, G.

AU - Rostami, H.

AU - Tomadin, A.

AU - Balci, O.

AU - Paradisanos, I.

AU - Pogna, E.A.A.

AU - Cerullo, G.

AU - Lidorikis, E.

AU - Polini, M.

AU - Ferrari, A.C.

N1 - Export Date: 21 May 2020

PY - 2019/6/27

Y1 - 2019/6/27

N2 - Hot-electrons dominate the ultrafast (∼fs-ps) optical and electronic properties of metals and semiconductors [1-2] and they are exploited in a variety of applications including photovoltaics and photodetection. Here we perform power-dependent third harmonic generation (THG) measurements on gated single layer graphene (SLG) and we show that hot-electrons modulate significantly the power-law dependence of THG, inducing a large deviation from the expected cubic power-law. We use a Chemical Vapor Deposition (CVD) SLG sample transferred on Fused Silica (FS) and gated by ionic liquid (IL), Fig.1(a). We excite the sample with the idler beam of an Optical Parametric Oscillator (OPO, Coherent) at a photon energy of ħω0=0.69eV. The OPO is seeded by a mode-locked Ti:Sa laser (Coherent) with 150fs pulse duration and 80MHz repetition rate. The OPO idler spot-size is∼4.7µm and the pulse duration ∼300fs.

AB - Hot-electrons dominate the ultrafast (∼fs-ps) optical and electronic properties of metals and semiconductors [1-2] and they are exploited in a variety of applications including photovoltaics and photodetection. Here we perform power-dependent third harmonic generation (THG) measurements on gated single layer graphene (SLG) and we show that hot-electrons modulate significantly the power-law dependence of THG, inducing a large deviation from the expected cubic power-law. We use a Chemical Vapor Deposition (CVD) SLG sample transferred on Fused Silica (FS) and gated by ionic liquid (IL), Fig.1(a). We excite the sample with the idler beam of an Optical Parametric Oscillator (OPO, Coherent) at a photon energy of ħω0=0.69eV. The OPO is seeded by a mode-locked Ti:Sa laser (Coherent) with 150fs pulse duration and 80MHz repetition rate. The OPO idler spot-size is∼4.7µm and the pulse duration ∼300fs.

M3 - Conference paper

T2 - The European Conference on Lasers and Electro-Optics 2019

Y2 - 23 June 2019 through 27 June 2019

ER -

Research