Rights statement: © 1997 The American Physical Society
Final published version, 123 KB, PDF document
Research output: Contribution to Journal/Magazine › Journal article › peer-review
<mark>Journal publication date</mark> | 15/07/1997 |
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<mark>Journal</mark> | Physical review B |
Issue number | 3 |
Volume | 56 |
Number of pages | 4 |
Pages (from-to) | 1049-1052 |
Publication Status | Published |
<mark>Original language</mark> | English |
Differential conductance of the resonant-tunneling structure with a single impurity level studied in the current plateau regime undergoes fluctuations around a zero average manifesting the energy dependence of the local density of states in a disordered electrode. Although the rms value of dI/dV depends on disorder and barrier transparencies, it is almost independent of temperature and, as a function of bias voltage, has a correlation function scaled by the intrinsic width of the resonance, which can be regarded as a tool to measure this quantity beyond the main differential-conductance peak. The analysis is extended to the regime of classically high magnetic fields where both the amplitude and correlation magnetic field are expected to increase.