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  • PhysRevB.90.085309

    Rights statement: ©2014 American Physical Society

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Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels. / Velichko, Anton V.; Makarovsky, O.; Mori, N. et al.
In: Physical review B, Vol. 90, 085309, 20.08.2014.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Velichko, AV, Makarovsky, O, Mori, N, Eaves, L, Krier, A, Zhuang, Q & Patane, A 2014, 'Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels', Physical review B, vol. 90, 085309. https://doi.org/10.1103/PhysRevB.90.085309

APA

Velichko, A. V., Makarovsky, O., Mori, N., Eaves, L., Krier, A., Zhuang, Q., & Patane, A. (2014). Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels. Physical review B, 90, Article 085309. https://doi.org/10.1103/PhysRevB.90.085309

Vancouver

Velichko AV, Makarovsky O, Mori N, Eaves L, Krier A, Zhuang Q et al. Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels. Physical review B. 2014 Aug 20;90:085309. doi: 10.1103/PhysRevB.90.085309

Author

Velichko, Anton V. ; Makarovsky, O. ; Mori, N. et al. / Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels. In: Physical review B. 2014 ; Vol. 90.

Bibtex

@article{bad2550d158c46d696fc02ed17d0ddef,
title = "Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels",
abstract = "We report on hot electron induced impact ionization and large room-temperature magnetoresistance (MR) in micron-sized channels of n-type high-mobility InAs (μ=3.3m2V−1s−1 at T=300K): the MR reaches values of up to 450% in magnetic fields of 1 T and applied voltages of ∼1 V and is weakly dependent on temperature. We present Monte Carlo simulations of the hot electron dynamics to account for the large MR and its dependence on the sample geometry and applied electric and magnetic fields. Our work demonstrates that the impact ionization of electrons at room temperature, under small applied magnetic fields (<1 T) and small voltages (<1 V), can provide an extremely sensitive mechanism for controlling the electrical resistance of high-mobility semiconductors.",
author = "Velichko, {Anton V.} and O. Makarovsky and N. Mori and L. Eaves and Anthony Krier and Qiandong Zhuang and Amalia Patane",
note = "{\textcopyright}2014 American Physical Society",
year = "2014",
month = aug,
day = "20",
doi = "10.1103/PhysRevB.90.085309",
language = "English",
volume = "90",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",

}

RIS

TY - JOUR

T1 - Impact ionization and large room-temperature magnetoresistance in micron-sized high-mobility InAs channels

AU - Velichko, Anton V.

AU - Makarovsky, O.

AU - Mori, N.

AU - Eaves, L.

AU - Krier, Anthony

AU - Zhuang, Qiandong

AU - Patane, Amalia

N1 - ©2014 American Physical Society

PY - 2014/8/20

Y1 - 2014/8/20

N2 - We report on hot electron induced impact ionization and large room-temperature magnetoresistance (MR) in micron-sized channels of n-type high-mobility InAs (μ=3.3m2V−1s−1 at T=300K): the MR reaches values of up to 450% in magnetic fields of 1 T and applied voltages of ∼1 V and is weakly dependent on temperature. We present Monte Carlo simulations of the hot electron dynamics to account for the large MR and its dependence on the sample geometry and applied electric and magnetic fields. Our work demonstrates that the impact ionization of electrons at room temperature, under small applied magnetic fields (<1 T) and small voltages (<1 V), can provide an extremely sensitive mechanism for controlling the electrical resistance of high-mobility semiconductors.

AB - We report on hot electron induced impact ionization and large room-temperature magnetoresistance (MR) in micron-sized channels of n-type high-mobility InAs (μ=3.3m2V−1s−1 at T=300K): the MR reaches values of up to 450% in magnetic fields of 1 T and applied voltages of ∼1 V and is weakly dependent on temperature. We present Monte Carlo simulations of the hot electron dynamics to account for the large MR and its dependence on the sample geometry and applied electric and magnetic fields. Our work demonstrates that the impact ionization of electrons at room temperature, under small applied magnetic fields (<1 T) and small voltages (<1 V), can provide an extremely sensitive mechanism for controlling the electrical resistance of high-mobility semiconductors.

U2 - 10.1103/PhysRevB.90.085309

DO - 10.1103/PhysRevB.90.085309

M3 - Journal article

VL - 90

JO - Physical review B

JF - Physical review B

SN - 1098-0121

M1 - 085309

ER -