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InAs-based dilute nitride materials and devices for the mid-infrared spectral range

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InAs-based dilute nitride materials and devices for the mid-infrared spectral range. / Krier, Anthony; De La Mare, Martin; Zhuang, Qiandong et al.

In: Proceedings of SPIE, Vol. 8631, 86311Q, 04.02.2013.

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Krier A, De La Mare M, Zhuang Q, Carrington PJ, Patane A. InAs-based dilute nitride materials and devices for the mid-infrared spectral range. Proceedings of SPIE. 2013 Feb 4;8631:86311Q. doi: 10.1117/12.2008800

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@article{d40665b3365046ad89d8b37d7ac1fda5,
title = "InAs-based dilute nitride materials and devices for the mid-infrared spectral range",
abstract = "In this work we report on the characterization of InAsNSb dilute nitride alloys and mutli-quantum well structures. InAsN epilayers with room-temperature photoluminescence emission have been successfully grown by MBE on InAs and GaAs substrates. By careful attention to growth conditions, device quality material can be obtained for N contents up to ~3% with band gap reduction which follows the band anti-crossing model. Mid-infrared light-emitting diodes containing ten period InAsNSb/InAs multi-quantum wells within the active region were fabricated. These devices exhibited electroluminescence up to room temperature consistent with e-hh1 and e-lh1 transitions within type I quantum wells in good agreement with calculations. Comparison of the temperature dependence of the EL with that of type II InAsSb/InAs reveals more intense emission at low temperature and an improved temperature quenching up to T~200 K where thermally activated carrier leakage becomes important and further increase in the QW band offsets is needed. This material system shows promise for use in mid-infrared diode lasers and other optoelectronic devices.",
author = "Anthony Krier and {De La Mare}, Martin and Qiandong Zhuang and Carrington, {Peter James} and A. Patane",
year = "2013",
month = feb,
day = "4",
doi = "10.1117/12.2008800",
language = "English",
volume = "8631",
journal = "Proceedings of SPIE",
issn = "0277-786X",
publisher = "SPIE",

}

RIS

TY - JOUR

T1 - InAs-based dilute nitride materials and devices for the mid-infrared spectral range

AU - Krier, Anthony

AU - De La Mare, Martin

AU - Zhuang, Qiandong

AU - Carrington, Peter James

AU - Patane, A.

PY - 2013/2/4

Y1 - 2013/2/4

N2 - In this work we report on the characterization of InAsNSb dilute nitride alloys and mutli-quantum well structures. InAsN epilayers with room-temperature photoluminescence emission have been successfully grown by MBE on InAs and GaAs substrates. By careful attention to growth conditions, device quality material can be obtained for N contents up to ~3% with band gap reduction which follows the band anti-crossing model. Mid-infrared light-emitting diodes containing ten period InAsNSb/InAs multi-quantum wells within the active region were fabricated. These devices exhibited electroluminescence up to room temperature consistent with e-hh1 and e-lh1 transitions within type I quantum wells in good agreement with calculations. Comparison of the temperature dependence of the EL with that of type II InAsSb/InAs reveals more intense emission at low temperature and an improved temperature quenching up to T~200 K where thermally activated carrier leakage becomes important and further increase in the QW band offsets is needed. This material system shows promise for use in mid-infrared diode lasers and other optoelectronic devices.

AB - In this work we report on the characterization of InAsNSb dilute nitride alloys and mutli-quantum well structures. InAsN epilayers with room-temperature photoluminescence emission have been successfully grown by MBE on InAs and GaAs substrates. By careful attention to growth conditions, device quality material can be obtained for N contents up to ~3% with band gap reduction which follows the band anti-crossing model. Mid-infrared light-emitting diodes containing ten period InAsNSb/InAs multi-quantum wells within the active region were fabricated. These devices exhibited electroluminescence up to room temperature consistent with e-hh1 and e-lh1 transitions within type I quantum wells in good agreement with calculations. Comparison of the temperature dependence of the EL with that of type II InAsSb/InAs reveals more intense emission at low temperature and an improved temperature quenching up to T~200 K where thermally activated carrier leakage becomes important and further increase in the QW band offsets is needed. This material system shows promise for use in mid-infrared diode lasers and other optoelectronic devices.

U2 - 10.1117/12.2008800

DO - 10.1117/12.2008800

M3 - Journal article

VL - 8631

JO - Proceedings of SPIE

JF - Proceedings of SPIE

SN - 0277-786X

M1 - 86311Q

ER -