Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
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TY - GEN
T1 - InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes
AU - Solov'ev, V. A.
AU - Carrington, P.
AU - Zhuang, Q.
AU - Lai, K. T.
AU - Haywood, S. K.
AU - Ivanov, S. V.
AU - Krier, A.
PY - 2008
Y1 - 2008
N2 - We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.
AB - We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.
M3 - Conference contribution/Paper
SN - 978-1-4020-8424-9
SP - 129
EP - 131
BT - NARROW GAP SEMICONDUCTORS 2007
A2 - Murdin, BN
A2 - Clowes, S
PB - Springer
CY - DORDRECHT
T2 - 13th International Conference on Narrow Gap Semiconductors
Y2 - 8 July 2007 through 12 July 2007
ER -