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InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

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InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. / Solov'ev, V. A.; Carrington, P.; Zhuang, Q.; Lai, K. T.; Haywood, S. K.; Ivanov, S. V.; Krier, A.

NARROW GAP SEMICONDUCTORS 2007. ed. / BN Murdin; S Clowes. DORDRECHT : Springer, 2008. p. 129-131.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Solov'ev, VA, Carrington, P, Zhuang, Q, Lai, KT, Haywood, SK, Ivanov, SV & Krier, A 2008, InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. in BN Murdin & S Clowes (eds), NARROW GAP SEMICONDUCTORS 2007. Springer, DORDRECHT, pp. 129-131, 13th International Conference on Narrow Gap Semiconductors, Guildford, 8/07/07.

APA

Solov'ev, V. A., Carrington, P., Zhuang, Q., Lai, K. T., Haywood, S. K., Ivanov, S. V., & Krier, A. (2008). InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In BN. Murdin, & S. Clowes (Eds.), NARROW GAP SEMICONDUCTORS 2007 (pp. 129-131). Springer.

Vancouver

Solov'ev VA, Carrington P, Zhuang Q, Lai KT, Haywood SK, Ivanov SV et al. InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. In Murdin BN, Clowes S, editors, NARROW GAP SEMICONDUCTORS 2007. DORDRECHT: Springer. 2008. p. 129-131

Author

Solov'ev, V. A. ; Carrington, P. ; Zhuang, Q. ; Lai, K. T. ; Haywood, S. K. ; Ivanov, S. V. ; Krier, A. / InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes. NARROW GAP SEMICONDUCTORS 2007. editor / BN Murdin ; S Clowes. DORDRECHT : Springer, 2008. pp. 129-131

Bibtex

@inproceedings{f4f2da1a1b2f493987615e5a3586325d,
title = "InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes",
abstract = "We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.",
author = "Solov'ev, {V. A.} and P. Carrington and Q. Zhuang and Lai, {K. T.} and Haywood, {S. K.} and Ivanov, {S. V.} and A. Krier",
year = "2008",
language = "English",
isbn = "978-1-4020-8424-9",
pages = "129--131",
editor = "BN Murdin and S Clowes",
booktitle = "NARROW GAP SEMICONDUCTORS 2007",
publisher = "Springer",
note = "13th International Conference on Narrow Gap Semiconductors ; Conference date: 08-07-2007 Through 12-07-2007",

}

RIS

TY - GEN

T1 - InSb/InAs nanostructures grown by molecular beam epitaxy using Sb-2 and AS(2) fluxes

AU - Solov'ev, V. A.

AU - Carrington, P.

AU - Zhuang, Q.

AU - Lai, K. T.

AU - Haywood, S. K.

AU - Ivanov, S. V.

AU - Krier, A.

PY - 2008

Y1 - 2008

N2 - We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.

AB - We report the molecular beam epitaxial growth of InSb sub-monolayers inserted in an InAs matrix using Sb-2 and AS(2) fluxes. The InSb/InAs nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (T-Gr = 450-320 degrees C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 mu m range at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb-2,AS(2)) and (Sb-4,AS(4)) is also presented.

M3 - Conference contribution/Paper

SN - 978-1-4020-8424-9

SP - 129

EP - 131

BT - NARROW GAP SEMICONDUCTORS 2007

A2 - Murdin, BN

A2 - Clowes, S

PB - Springer

CY - DORDRECHT

T2 - 13th International Conference on Narrow Gap Semiconductors

Y2 - 8 July 2007 through 12 July 2007

ER -