Final published version
Research output: Contribution to Journal/Magazine › Journal article
Research output: Contribution to Journal/Magazine › Journal article
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TY - JOUR
T1 - Integrated Plasmonic Infrared Photodetector Based on Colloidal HgTe Quantum Dots
AU - Zhu, Bingqing
AU - Chen, Mengyu
AU - Zhu, Qiang
AU - Zhou, Guodong
AU - Abdelazim, Nema
AU - Zhou, Wen
AU - Kershaw, Stephen V.
AU - Rogach, Andrey L.
AU - Zhao, Ni
AU - Tsang, Hon Ki
PY - 2019/10/10
Y1 - 2019/10/10
N2 - This paper presents a 2300 nm wavelength photodetector which comprises a spin‐deposited colloidal HgTe quantum dot (QD) film on a metal‐insulator‐metal (MIM) plasmonic waveguide. This photodetector is an integrated device based on the complementary metal‐oxide‐semiconductor compatible silicon‐on‐insulator platform. The device employs input and output silicon waveguide grating couplers, and HgTe QDs are used as the infrared photosensing material. Infrared light is coupled to the strongly confined MIM waveguide mode, which shrinks the device footprint and improves the light detection efficiency simultaneously. A room temperature responsivity of 23 mA W−1 and a noise‐equivalent power of 8.7 × 10−11 W Hz−1/2 at 2300 nm wavelength are achieved by the photodetector at 2.14 W mm−2 (measured at the input to the plasmonic waveguide) with a device footprint of 15 µm × 0.35 µm. The light intensity–dependent photocurrent, the current noise spectral density, and the 3 dB operation bandwidth are all characterized. The charge transfer properties of the organic HgTe QD films are further analyzed based on field effect transistor measurements.
AB - This paper presents a 2300 nm wavelength photodetector which comprises a spin‐deposited colloidal HgTe quantum dot (QD) film on a metal‐insulator‐metal (MIM) plasmonic waveguide. This photodetector is an integrated device based on the complementary metal‐oxide‐semiconductor compatible silicon‐on‐insulator platform. The device employs input and output silicon waveguide grating couplers, and HgTe QDs are used as the infrared photosensing material. Infrared light is coupled to the strongly confined MIM waveguide mode, which shrinks the device footprint and improves the light detection efficiency simultaneously. A room temperature responsivity of 23 mA W−1 and a noise‐equivalent power of 8.7 × 10−11 W Hz−1/2 at 2300 nm wavelength are achieved by the photodetector at 2.14 W mm−2 (measured at the input to the plasmonic waveguide) with a device footprint of 15 µm × 0.35 µm. The light intensity–dependent photocurrent, the current noise spectral density, and the 3 dB operation bandwidth are all characterized. The charge transfer properties of the organic HgTe QD films are further analyzed based on field effect transistor measurements.
KW - colloidal quantum dots
KW - infrared photodetectors
KW - plasmonic waveguides
KW - silicon photonics
U2 - 10.1002/admt.201900354
DO - 10.1002/admt.201900354
M3 - Journal article
VL - 4
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
SN - 2365-709X
IS - 10
M1 - 1900354
ER -